Low dielectric loss and non-Debye relaxation of gamma- Y2Si 2 O7 ceramic at elevated temperature in X -band

Mao Sheng Cao; Zhi Ling Hou; Jie Yuan; Lan Tian Xiong; Xiao Ling Shi

doi:10.1063/1.3117525

Low dielectric loss and non-Debye relaxation of gamma- Y₂Si ₂ O₇ ceramic at elevated temperature in X -band

Mao Sheng Cao^*, Zhi Ling Hou, Jie Yuan, Lan Tian Xiong, Xiao Ling Shi

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Bulk single-phase gamma- Y₂ Si₂ O₇ ceramic has been synthesized from a mixture of Y₂O₃ powder and SiO₂ nanopowder at 1400 °C. The dielectric properties are reported at the temperature ranging from room temperature to 1400 °C in X -band. The results show that gamma- Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behavior different from that of SiO₂. The peculiar relaxation peak is attributed to the structural relaxation polarization caused by thermal-excitation structural defects, which implies that no ionic conductance exists in this material. Such low dielectric loss will draw much attention for potential dielectric applications at high temperature.

Original language	English
Article number	106102
Journal	Journal of Applied Physics
Volume	105
Issue number	10
DOIs	https://doi.org/10.1063/1.3117525
Publication status	Published - 2009

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title = "Low dielectric loss and non-Debye relaxation of gamma- Y2Si 2 O7 ceramic at elevated temperature in X -band",

abstract = "Bulk single-phase gamma- Y2 Si2 O7 ceramic has been synthesized from a mixture of Y2O3 powder and SiO2 nanopowder at 1400 °C. The dielectric properties are reported at the temperature ranging from room temperature to 1400 °C in X -band. The results show that gamma- Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behavior different from that of SiO2. The peculiar relaxation peak is attributed to the structural relaxation polarization caused by thermal-excitation structural defects, which implies that no ionic conductance exists in this material. Such low dielectric loss will draw much attention for potential dielectric applications at high temperature.",

author = "Cao, {Mao Sheng} and Hou, {Zhi Ling} and Jie Yuan and Xiong, {Lan Tian} and Shi, {Xiao Ling}",

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AU - Cao, Mao Sheng

AU - Hou, Zhi Ling

AU - Yuan, Jie

AU - Xiong, Lan Tian

AU - Shi, Xiao Ling

PY - 2009

Y1 - 2009

N2 - Bulk single-phase gamma- Y2 Si2 O7 ceramic has been synthesized from a mixture of Y2O3 powder and SiO2 nanopowder at 1400 °C. The dielectric properties are reported at the temperature ranging from room temperature to 1400 °C in X -band. The results show that gamma- Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behavior different from that of SiO2. The peculiar relaxation peak is attributed to the structural relaxation polarization caused by thermal-excitation structural defects, which implies that no ionic conductance exists in this material. Such low dielectric loss will draw much attention for potential dielectric applications at high temperature.

AB - Bulk single-phase gamma- Y2 Si2 O7 ceramic has been synthesized from a mixture of Y2O3 powder and SiO2 nanopowder at 1400 °C. The dielectric properties are reported at the temperature ranging from room temperature to 1400 °C in X -band. The results show that gamma- Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behavior different from that of SiO2. The peculiar relaxation peak is attributed to the structural relaxation polarization caused by thermal-excitation structural defects, which implies that no ionic conductance exists in this material. Such low dielectric loss will draw much attention for potential dielectric applications at high temperature.

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JF - Journal of Applied Physics

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M1 - 106102

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Low dielectric loss and non-Debye relaxation of gamma- Y₂Si ₂ O₇ ceramic at elevated temperature in X -band

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