Huang, S., Lu, Y., Wang, F., Lei, Y., Song, C., Zhang, J., Xing, Q., Wang, C., Xie, Y., Mu, L., Zhang, G., Yan, H., Chen, B., & Yan, H. (2021). Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. Physical Review Letters, 127(18), Article 186401. https://doi.org/10.1103/PhysRevLett.127.186401
Huang, Shenyang ; Lu, Yang ; Wang, Fanjie et al. / Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. In: Physical Review Letters. 2021 ; Vol. 127, No. 18.
@article{89f17a0634fb4a2eb8a28b88db9bfcd1,
title = "Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus",
abstract = "Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under , the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.",
author = "Shenyang Huang and Yang Lu and Fanjie Wang and Yuchen Lei and Chaoyu Song and Jiasheng Zhang and Qiaoxia Xing and Chong Wang and Yuangang Xie and Lei Mu and Guowei Zhang and Hao Yan and Bin Chen and Hugen Yan",
note = "Publisher Copyright: {\textcopyright} 2021 American Physical Society",
year = "2021",
month = oct,
day = "29",
doi = "10.1103/PhysRevLett.127.186401",
language = "English",
volume = "127",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "18",
}
Huang, S, Lu, Y, Wang, F, Lei, Y, Song, C, Zhang, J, Xing, Q, Wang, C, Xie, Y, Mu, L, Zhang, G, Yan, H, Chen, B & Yan, H 2021, 'Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus', Physical Review Letters, vol. 127, no. 18, 186401. https://doi.org/10.1103/PhysRevLett.127.186401
Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. / Huang, Shenyang; Lu, Yang; Wang, Fanjie et al.
In:
Physical Review Letters, Vol. 127, No. 18, 186401, 29.10.2021.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus
AU - Huang, Shenyang
AU - Lu, Yang
AU - Wang, Fanjie
AU - Lei, Yuchen
AU - Song, Chaoyu
AU - Zhang, Jiasheng
AU - Xing, Qiaoxia
AU - Wang, Chong
AU - Xie, Yuangang
AU - Mu, Lei
AU - Zhang, Guowei
AU - Yan, Hao
AU - Chen, Bin
AU - Yan, Hugen
N1 - Publisher Copyright:
© 2021 American Physical Society
PY - 2021/10/29
Y1 - 2021/10/29
N2 - Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under , the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
AB - Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under , the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
UR - http://www.scopus.com/inward/record.url?scp=85118375675&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.127.186401
DO - 10.1103/PhysRevLett.127.186401
M3 - Article
C2 - 34767429
AN - SCOPUS:85118375675
SN - 0031-9007
VL - 127
JO - Physical Review Letters
JF - Physical Review Letters
IS - 18
M1 - 186401
ER -
Huang S, Lu Y, Wang F, Lei Y, Song C, Zhang J et al. Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. Physical Review Letters. 2021 Oct 29;127(18):186401. doi: 10.1103/PhysRevLett.127.186401
