Abstract
Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.
Original language | English |
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Article number | 107307 |
Journal | Chinese Physics B |
Volume | 24 |
Issue number | 10 |
DOIs | |
Publication status | Published - 20 Aug 2015 |
Externally published | Yes |
Keywords
- photovoltaic effect
- resistance reduction
- Schottky junction