Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Shuan Hu Wang*, Xu Zhang, Lv Kuan Zou, Jing Zhao, Wen Xin Wang, Ji Rong Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

Original languageEnglish
Article number107307
JournalChinese Physics B
Volume24
Issue number10
DOIs
Publication statusPublished - 20 Aug 2015
Externally publishedYes

Keywords

  • photovoltaic effect
  • resistance reduction
  • Schottky junction

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