Lateral capacitive CMOS accelerometer with structural curl compensation

Gang Zhang; Huikai Xie; Lauren E. de Rosset; Gary K. Fedder

Lateral capacitive CMOS accelerometer with structural curl compensation

Gang Zhang^*, Huikai Xie, Lauren E. de Rosset, Gary K. Fedder

^*Corresponding author for this work

Carnegie Mellon University

Research output: Contribution to conference › Paper › peer-review

50 Citations (Scopus)

Abstract

We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which can not be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg/rtHz noise floor at the output of the sensing element.

Original language	English
Pages	606-611
Number of pages	6
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS - Orlando, FL, USA Duration: 17 Jan 1999 → 21 Jan 1999

Conference

Conference	Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS
City	Orlando, FL, USA
Period	17/01/99 → 21/01/99

Cite this

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title = "Lateral capacitive CMOS accelerometer with structural curl compensation",

abstract = "We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which can not be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg/rtHz noise floor at the output of the sensing element.",

author = "Gang Zhang and Huikai Xie and {de Rosset}, {Lauren E.} and Fedder, {Gary K.}",

year = "1999",

language = "English",

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note = "Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS ; Conference date: 17-01-1999 Through 21-01-1999",

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T1 - Lateral capacitive CMOS accelerometer with structural curl compensation

AU - Zhang, Gang

AU - Xie, Huikai

AU - de Rosset, Lauren E.

AU - Fedder, Gary K.

PY - 1999

Y1 - 1999

N2 - We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which can not be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg/rtHz noise floor at the output of the sensing element.

AB - We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which can not be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg/rtHz noise floor at the output of the sensing element.

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M3 - Paper

AN - SCOPUS:0032631220

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T2 - Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS

Y2 - 17 January 1999 through 21 January 1999

ER -

Lateral capacitive CMOS accelerometer with structural curl compensation

Abstract

Conference

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