Large scale tapered GaN rods grown by chemical vapour deposition

Hailin Qiu; Chuanbao Cao; Xu Xiang; Yunhong Zhang; Jie Li; Hesun Zhu

doi:10.1016/j.jcrysgro.2005.11.120

Large scale tapered GaN rods grown by chemical vapour deposition

Hailin Qiu, Chuanbao Cao^*, Xu Xiang, Yunhong Zhang, Jie Li, Hesun Zhu

^*Corresponding author for this work

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Large quantities of gallium nitride-tapered rods with sharp-tip were synthesized by a chemical vapour deposition method using the reaction of ammonia with the mixture of gallium oxide and carbon. The as-prepared rods have triangle cross section with lateral slope tapered to their ends; they are single-crystalline wurtzite structure crystals grown with the [112̄0] direction. The axial self-catalytic vapour-liquid-solid (VLS) growth and radial vapour-solid (VS) growth mechanism as well as the change of reactive atomic ratio (Ga/N) during growth process were believed to contribute to the formation of tapered rods.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Journal of Crystal Growth
Volume	290
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.11.120
Publication status	Published - 15 Apr 2006

Keywords

A1. Chemical vapour deposition
A1. Crystal morphology
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2005.11.120

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abstract = "Large quantities of gallium nitride-tapered rods with sharp-tip were synthesized by a chemical vapour deposition method using the reaction of ammonia with the mixture of gallium oxide and carbon. The as-prepared rods have triangle cross section with lateral slope tapered to their ends; they are single-crystalline wurtzite structure crystals grown with the [11{\=2}0] direction. The axial self-catalytic vapour-liquid-solid (VLS) growth and radial vapour-solid (VS) growth mechanism as well as the change of reactive atomic ratio (Ga/N) during growth process were believed to contribute to the formation of tapered rods.",

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T1 - Large scale tapered GaN rods grown by chemical vapour deposition

AU - Qiu, Hailin

AU - Cao, Chuanbao

AU - Xiang, Xu

AU - Zhang, Yunhong

AU - Li, Jie

AU - Zhu, Hesun

PY - 2006/4/15

Y1 - 2006/4/15

N2 - Large quantities of gallium nitride-tapered rods with sharp-tip were synthesized by a chemical vapour deposition method using the reaction of ammonia with the mixture of gallium oxide and carbon. The as-prepared rods have triangle cross section with lateral slope tapered to their ends; they are single-crystalline wurtzite structure crystals grown with the [112̄0] direction. The axial self-catalytic vapour-liquid-solid (VLS) growth and radial vapour-solid (VS) growth mechanism as well as the change of reactive atomic ratio (Ga/N) during growth process were believed to contribute to the formation of tapered rods.

AB - Large quantities of gallium nitride-tapered rods with sharp-tip were synthesized by a chemical vapour deposition method using the reaction of ammonia with the mixture of gallium oxide and carbon. The as-prepared rods have triangle cross section with lateral slope tapered to their ends; they are single-crystalline wurtzite structure crystals grown with the [112̄0] direction. The axial self-catalytic vapour-liquid-solid (VLS) growth and radial vapour-solid (VS) growth mechanism as well as the change of reactive atomic ratio (Ga/N) during growth process were believed to contribute to the formation of tapered rods.

KW - A1. Chemical vapour deposition

KW - A1. Crystal morphology

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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DO - 10.1016/j.jcrysgro.2005.11.120

M3 - Article

AN - SCOPUS:33645018108

SN - 0022-0248

VL - 290

SP - 1

EP - 5

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Large scale tapered GaN rods grown by chemical vapour deposition

Abstract

Keywords

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