TY - JOUR
T1 - Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction
AU - Bai, Chunxu
AU - Zhang, Xiangdong
PY - 2008/1/28
Y1 - 2008/1/28
N2 - Spin-polarized transports of relativistic electrons through graphene-based ferromagnet/insulator/ferromagnet (FG/IG/FG) single junctions have been investigated theoretically. Large oscillating tunnel magnetoresistance (TMR) has been found in monolayer and bilayer FG/IG/FG junctions. The oscillating amplitudes of TMR do not decrease with the increase of the thickness and the height of barrier, in contrast to the exponential decay in conventional ferromagnet/insulator/ferromagnet single junction. The physical origin for such a phenomenon has also been analyzed. It is anticipated to apply such a phenomenon to design the spin-polarized electron device based on the graphene materials.
AB - Spin-polarized transports of relativistic electrons through graphene-based ferromagnet/insulator/ferromagnet (FG/IG/FG) single junctions have been investigated theoretically. Large oscillating tunnel magnetoresistance (TMR) has been found in monolayer and bilayer FG/IG/FG junctions. The oscillating amplitudes of TMR do not decrease with the increase of the thickness and the height of barrier, in contrast to the exponential decay in conventional ferromagnet/insulator/ferromagnet single junction. The physical origin for such a phenomenon has also been analyzed. It is anticipated to apply such a phenomenon to design the spin-polarized electron device based on the graphene materials.
UR - http://www.scopus.com/inward/record.url?scp=38049092906&partnerID=8YFLogxK
U2 - 10.1016/j.physleta.2007.08.050
DO - 10.1016/j.physleta.2007.08.050
M3 - Article
AN - SCOPUS:38049092906
SN - 0375-9601
VL - 372
SP - 725
EP - 729
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 5
ER -