TY - JOUR
T1 - Key technology practice of high-speed access and research on the temperature dependence of key time parameters based on NAND flash memory
AU - Hou, Zhuo
AU - Chen, Huimin
AU - Deng, Jiahao
AU - Duan, Zuodong
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2021
Y1 - 2021
N2 - This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end. The flow process of multi-channel sensor data sampling, holding, conversion, coding, and storage in the data acquisition system is described. The basic working principle and working process of NAND flash memory are introduced. Based on Interleaved Two-plane Program Technology, and the solution of burst massive throughput in high-speed data transmission is proposed. Compared with previously published papers, the temperature dependence of key time parameters of NAND flash memory is studied and analyzed under the condition of temperature change more concretely. The changing trend of three key time parameters of NAND type flash under different temperatures is analyzed by using appropriate test samples. At the same time, the analysis of the causes of reflection from the phenomenon is further expanded and discussed. The combination of theory and practice can provide powerful suggestions for more efficient and accurate application of NAND flash memory.
AB - This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end. The flow process of multi-channel sensor data sampling, holding, conversion, coding, and storage in the data acquisition system is described. The basic working principle and working process of NAND flash memory are introduced. Based on Interleaved Two-plane Program Technology, and the solution of burst massive throughput in high-speed data transmission is proposed. Compared with previously published papers, the temperature dependence of key time parameters of NAND flash memory is studied and analyzed under the condition of temperature change more concretely. The changing trend of three key time parameters of NAND type flash under different temperatures is analyzed by using appropriate test samples. At the same time, the analysis of the causes of reflection from the phenomenon is further expanded and discussed. The combination of theory and practice can provide powerful suggestions for more efficient and accurate application of NAND flash memory.
KW - NAND flash
KW - burst massive data
KW - interleave two-plane program
KW - temperature dependence
UR - http://www.scopus.com/inward/record.url?scp=85099730261&partnerID=8YFLogxK
U2 - 10.1109/ACCESS.2021.3052159
DO - 10.1109/ACCESS.2021.3052159
M3 - Article
AN - SCOPUS:85099730261
SN - 2169-3536
VL - 9
SP - 12203
EP - 12208
JO - IEEE Access
JF - IEEE Access
M1 - 9328112
ER -