Junction temperature estimation model of insulated gate bipolar transistor power module in three-phase inverter

Xin Xin, Chengning Zhang

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Abstract

This paper proposes a junction temperature estimation method for IGBT power module in three-phase inverter through coupling the temperature-corrected power loss calculation model and Foster thermal model. Considering the structural characteristics of IGBT, the loss calculation model is established with full study about the influence rule of temperature, gate resistance and other factors on the loss. The instantaneous power loss can be calculated and applied to the thermal model, through which the temperature on that thermo cycle can be obtained and fed back to the power loss calculation model for calculation of next cycle. The coupling of the two models is implemented in Matlab/Simulink. The simulation result shows the model can meet the requirement of engineering design, and compared with the manufacturer's calculation method, it is more versatile and can reflect the fluctuation of the temperature under different load conditions, which is more favorable for monitoring the health of the device.

Original languageEnglish
Title of host publicationProceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1267-1272
Number of pages6
ISBN (Electronic)9781538611272
DOIs
Publication statusPublished - 15 Dec 2017
Event43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, China
Duration: 29 Oct 20171 Nov 2017

Publication series

NameProceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
Volume2017-January

Conference

Conference43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Country/TerritoryChina
CityBeijing
Period29/10/171/11/17

Keywords

  • Foster thermal network
  • IGBT
  • junction temperature estimation
  • power loss
  • thermoelectric model
  • three-phase inverter

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Xin, X., & Zhang, C. (2017). Junction temperature estimation model of insulated gate bipolar transistor power module in three-phase inverter. In Proceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society (pp. 1267-1272). (Proceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IECON.2017.8216216