Interplay between different magnetisms in Cr-doped topological insulators

Xufeng Kou; Murong Lang; Yabin Fan; Ying Jiang; Tianxiao Nie; Jianmin Zhang; Wanjun Jiang; Yong Wang; Yugui Yao; Liang He; Kang L. Wang

doi:10.1021/nn4038145

Interplay between different magnetisms in Cr-doped topological insulators

Xufeng Kou, Murong Lang, Yabin Fan, Ying Jiang, Tianxiao Nie, Jianmin Zhang, Wanjun Jiang, Yong Wang, Yugui Yao, Liang He^*, Kang L. Wang

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

115 Citations (Scopus)

Abstract

Breaking the time-reversal-symmetry of topological insulators through magnetic doping has led to exotic physical discoveries. Here, we report the gate-dependent magneto-transport measurements on the Cr-doped (Bi _xSb_1-x)₂Te₃ thin films. With effective top-gate modulations, we demonstrate the presence of both the hole-mediated RKKY coupling and carrier-independent van Vleck magnetism in the magnetic TI systems. Most importantly, by varying the Cr doping concentrations from 2% to 20%, we unveil the interplay between the two magnetic orders and establish the valid approach to either enhance or suppress each individual contribution. The electric-field-controlled ferromagnetisms identified in the Cr-doped TI materials will serve as the fundamental step to further explore the TRS-breaking TI systems, and it may also help to expand the functionality of TI-based device for spintronics applications.

Original language	English
Pages (from-to)	9205-9212
Number of pages	8
Journal	ACS Nano
Volume	7
Issue number	10
DOIs	https://doi.org/10.1021/nn4038145
Publication status	Published - 22 Oct 2013

Keywords

electric-field-controlled ferromagnetism
magnetic doping
topological insulator
van Vleck magnetism

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10.1021/nn4038145

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@article{f1c739cf77c4462eaf45cb4b49ec4b3d,

title = "Interplay between different magnetisms in Cr-doped topological insulators",

abstract = "Breaking the time-reversal-symmetry of topological insulators through magnetic doping has led to exotic physical discoveries. Here, we report the gate-dependent magneto-transport measurements on the Cr-doped (Bi xSb1-x)2Te3 thin films. With effective top-gate modulations, we demonstrate the presence of both the hole-mediated RKKY coupling and carrier-independent van Vleck magnetism in the magnetic TI systems. Most importantly, by varying the Cr doping concentrations from 2% to 20%, we unveil the interplay between the two magnetic orders and establish the valid approach to either enhance or suppress each individual contribution. The electric-field-controlled ferromagnetisms identified in the Cr-doped TI materials will serve as the fundamental step to further explore the TRS-breaking TI systems, and it may also help to expand the functionality of TI-based device for spintronics applications.",

keywords = "electric-field-controlled ferromagnetism, magnetic doping, topological insulator, van Vleck magnetism",

author = "Xufeng Kou and Murong Lang and Yabin Fan and Ying Jiang and Tianxiao Nie and Jianmin Zhang and Wanjun Jiang and Yong Wang and Yugui Yao and Liang He and Wang, {Kang L.}",

year = "2013",

month = oct,

day = "22",

doi = "10.1021/nn4038145",

language = "English",

volume = "7",

pages = "9205--9212",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Interplay between different magnetisms in Cr-doped topological insulators

AU - Kou, Xufeng

AU - Lang, Murong

AU - Fan, Yabin

AU - Jiang, Ying

AU - Nie, Tianxiao

AU - Zhang, Jianmin

AU - Jiang, Wanjun

AU - Wang, Yong

AU - Yao, Yugui

AU - He, Liang

AU - Wang, Kang L.

PY - 2013/10/22

Y1 - 2013/10/22

N2 - Breaking the time-reversal-symmetry of topological insulators through magnetic doping has led to exotic physical discoveries. Here, we report the gate-dependent magneto-transport measurements on the Cr-doped (Bi xSb1-x)2Te3 thin films. With effective top-gate modulations, we demonstrate the presence of both the hole-mediated RKKY coupling and carrier-independent van Vleck magnetism in the magnetic TI systems. Most importantly, by varying the Cr doping concentrations from 2% to 20%, we unveil the interplay between the two magnetic orders and establish the valid approach to either enhance or suppress each individual contribution. The electric-field-controlled ferromagnetisms identified in the Cr-doped TI materials will serve as the fundamental step to further explore the TRS-breaking TI systems, and it may also help to expand the functionality of TI-based device for spintronics applications.

AB - Breaking the time-reversal-symmetry of topological insulators through magnetic doping has led to exotic physical discoveries. Here, we report the gate-dependent magneto-transport measurements on the Cr-doped (Bi xSb1-x)2Te3 thin films. With effective top-gate modulations, we demonstrate the presence of both the hole-mediated RKKY coupling and carrier-independent van Vleck magnetism in the magnetic TI systems. Most importantly, by varying the Cr doping concentrations from 2% to 20%, we unveil the interplay between the two magnetic orders and establish the valid approach to either enhance or suppress each individual contribution. The electric-field-controlled ferromagnetisms identified in the Cr-doped TI materials will serve as the fundamental step to further explore the TRS-breaking TI systems, and it may also help to expand the functionality of TI-based device for spintronics applications.

KW - electric-field-controlled ferromagnetism

KW - magnetic doping

KW - topological insulator

KW - van Vleck magnetism

UR - http://www.scopus.com/inward/record.url?scp=84886991715&partnerID=8YFLogxK

U2 - 10.1021/nn4038145

DO - 10.1021/nn4038145

M3 - Article

AN - SCOPUS:84886991715

SN - 1936-0851

VL - 7

SP - 9205

EP - 9212

JO - ACS Nano

JF - ACS Nano

IS - 10

ER -

Interplay between different magnetisms in Cr-doped topological insulators

Abstract

Keywords

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