Abstract
Partial transient liquid-phase bonding (PTLP bonding) of silicon nitride (Si3N4) ceramic has been performed using Ti/Ni multi-interlayer in vacuum at 1273-1423 K. Interfacial microstructures were examined by scanning electron microscope, electron probe micro-analysis, and X-ray diffraction. The joint strength has been measured by four-point bending tests from room temperature up to 1000 °C. Interfacial structure of Si3N4/TiN/Ti5Si3+Ti 5Si4 + Ni3Si/(NiTi)/Ni3Ti/Ni is formed after bonding process. The NiTi layer is gradually consumed with simultaneous growth of the reaction layer and the Ni3 Ti layer. The room temperature joint strength is significantly affected by the reaction layer thickness, whereas the elevated temperature joint strength significantly depends on whether the low melting point NiTi layer exists in the joint. The joint strength of more than 100 MPa is retained up to 800 °C as the NiTi layer is completely consumed. A model is proposed to optimize the PTLP bonding parameters for optimizing joint strength at both room temperature and elevated temperature.
Original language | English |
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Pages (from-to) | 394-401 |
Number of pages | 8 |
Journal | Materials Science and Engineering: A |
Volume | 380 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 25 Aug 2004 |
Keywords
- Diffusion bonding
- Interfacial microstructure
- Joint strength
- Silicon nitride
- Transient liquid-phase