Abstract
InP-GaP bi-coaxial nanowires have been synthesized by a simple one-step thermal evaporation of InP and Ga powders. The products were investigated using scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy equipped with an X-ray energy dispersive spectrometer. Studies indicate that, within a single bi-coaxial nanowire, the InP subnanowire is single crystal with the preferred (111) direction and the GaP subnanowire is amorphous. Besides the InP - GaP bi-coaxial nanowires, some amorphous GaP nanotubes partially filled with In were also obtained. Possible growth mechanism was also proposed based on a series of experimental results and a vapor - liquid - solid mechanism was proposed for the nanostructures formation. Photoluminescence properties of the product were also studied.
Original language | English |
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Pages (from-to) | 3665-3668 |
Number of pages | 4 |
Journal | Journal of Physical Chemistry C |
Volume | 111 |
Issue number | 9 |
DOIs | |
Publication status | Published - 8 Mar 2007 |
Externally published | Yes |