Influence of the bombardment energy of CHn+ ions on the properties of diamond-like carbon films

Jing Wang; Wen Zhi Li; Heng De Li

doi:10.1016/S0257-8972(99)00304-7

Influence of the bombardment energy of CHⁿ⁺ ions on the properties of diamond-like carbon films

Jing Wang^*, Wen Zhi Li, Heng De Li

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

An ion-beam-assisted deposition (IBAD) system was employed to prepare diamond-like carbon (DLC) films at about room temperature. The structural, optical and electrical properties of the tetrahedral amorphous carbon films have been studied over the ion-bombardment energy range of 100-800eV in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structural properties. The sp³ fraction was found to depend strongly on the bombarding energy, giving a highly sp³-bonded DLC at ion energies around 600eV. The maximum optical band gap (E₀₄) and the electrical resistivity were found to coincide with the highest sp³ fraction. The deposition mechanism of the DLC films is discussed.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Surface and Coatings Technology
Volume	122
Issue number	2-3
DOIs	https://doi.org/10.1016/S0257-8972(99)00304-7
Publication status	Published - 15 Dec 1999
Externally published	Yes

Keywords

Diamond-like carbon
Electrical resistivity
Ion bombardment
Ion-beam-assisted deposition
Optical band gap
Raman spectroscopy

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10.1016/S0257-8972(99)00304-7

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title = "Influence of the bombardment energy of CHn+ ions on the properties of diamond-like carbon films",

abstract = "An ion-beam-assisted deposition (IBAD) system was employed to prepare diamond-like carbon (DLC) films at about room temperature. The structural, optical and electrical properties of the tetrahedral amorphous carbon films have been studied over the ion-bombardment energy range of 100-800eV in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structural properties. The sp3 fraction was found to depend strongly on the bombarding energy, giving a highly sp3-bonded DLC at ion energies around 600eV. The maximum optical band gap (E04) and the electrical resistivity were found to coincide with the highest sp3 fraction. The deposition mechanism of the DLC films is discussed.",

keywords = "Diamond-like carbon, Electrical resistivity, Ion bombardment, Ion-beam-assisted deposition, Optical band gap, Raman spectroscopy",

author = "Jing Wang and Li, {Wen Zhi} and Li, {Heng De}",

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TY - JOUR

T1 - Influence of the bombardment energy of CHn+ ions on the properties of diamond-like carbon films

AU - Wang, Jing

AU - Li, Wen Zhi

AU - Li, Heng De

PY - 1999/12/15

Y1 - 1999/12/15

N2 - An ion-beam-assisted deposition (IBAD) system was employed to prepare diamond-like carbon (DLC) films at about room temperature. The structural, optical and electrical properties of the tetrahedral amorphous carbon films have been studied over the ion-bombardment energy range of 100-800eV in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structural properties. The sp3 fraction was found to depend strongly on the bombarding energy, giving a highly sp3-bonded DLC at ion energies around 600eV. The maximum optical band gap (E04) and the electrical resistivity were found to coincide with the highest sp3 fraction. The deposition mechanism of the DLC films is discussed.

AB - An ion-beam-assisted deposition (IBAD) system was employed to prepare diamond-like carbon (DLC) films at about room temperature. The structural, optical and electrical properties of the tetrahedral amorphous carbon films have been studied over the ion-bombardment energy range of 100-800eV in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structural properties. The sp3 fraction was found to depend strongly on the bombarding energy, giving a highly sp3-bonded DLC at ion energies around 600eV. The maximum optical band gap (E04) and the electrical resistivity were found to coincide with the highest sp3 fraction. The deposition mechanism of the DLC films is discussed.

KW - Diamond-like carbon

KW - Electrical resistivity

KW - Ion bombardment

KW - Ion-beam-assisted deposition

KW - Optical band gap

KW - Raman spectroscopy

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U2 - 10.1016/S0257-8972(99)00304-7

DO - 10.1016/S0257-8972(99)00304-7

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SN - 0257-8972

VL - 122

SP - 273

EP - 276

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 2-3

ER -

Influence of the bombardment energy of CHⁿ⁺ ions on the properties of diamond-like carbon films

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