Abstract
Ti and Ga codoped ZnO (TGZO) thin films were deposited on glass substrates by radio-frequency magnetron sputtering technique using a sintered ceramic target of ZnO:TiO2:Ga2O3 (97wt%:1.5wt%:1.5wt%) as sputtering source. The influence of sputtering power on structural, electrical and optical properties of the TGZO thin films was investigated by X-ray diffraction, four-point probe and UV-visible spectrophotometer. The results show that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction. The sputtering power significantly affects the microstructure and electro-optical characteristics of the deposited films. The TGZO thin film prepared at the sputtering power of 200 W possesses the highest optoelectrical performance, which have the best crystal quality, the lowest resistivity, the highest average visible transmittance and the maximum figure of merit (1.22×10-2 Ω-1). Furthermore, the refractive index and extinction coefficient of the thin films were determined by the method of optical spectrum fitting, and the optical energy gaps were calculated using Tauc's relation.
| Original language | English |
|---|---|
| Pages (from-to) | 1353-1359 |
| Number of pages | 7 |
| Journal | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
| Volume | 42 |
| Issue number | 7 |
| Publication status | Published - Jul 2013 |
| Externally published | Yes |
Keywords
- Crystal quality
- Resistivity
- Sputtering power
- Transmittance
- ZnO thin film