Tian, Y., Lu, H., Tian, J., Li, C., Hui, C., Shi, X., Huang, Y., Shen, C., & Gao, H. J. (2012). Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords. Applied Physics Letters, 100(10), Article 103112. https://doi.org/10.1063/1.3693383
Tian, Yuan ; Lu, Hongliang ; Tian, Jifa et al. / Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords. In: Applied Physics Letters. 2012 ; Vol. 100, No. 10.
@article{623898544b50401c822bab296a531317,
title = "Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords",
abstract = "Magnesium-doped boron nanoswords were synthesized via a thermoreduction method. The as-prepared nanoswords are single crystalline and -rhombohedral (-rh) phase. Electrical transport measurements show that variable range hopping conductivity increases with temperature, and carrier mobility has a greater influence than carrier concentration. These results are consistent with the three dimensional Mott's model (M. Cutler and N. F. Mott, Phys. Rev. 181, 1336 (1969)) besides a high density of localized states at the Fermi level compared with bulk -rh boron. Conductivity of Mg-doped boron nanoswords is significantly lower than that of pure (free of magnesium) boron nanoswords. Electron energy loss spectroscopy studies confirm that the poorer conductivity arises from silicon against magnesium doping.",
author = "Yuan Tian and Hongliang Lu and Jifa Tian and Chen Li and Chao Hui and Xuezhao Shi and Yuan Huang and Chengmin Shen and Gao, {Hong Jun}",
year = "2012",
month = mar,
day = "5",
doi = "10.1063/1.3693383",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "10",
}
Tian, Y, Lu, H, Tian, J, Li, C, Hui, C, Shi, X, Huang, Y, Shen, C & Gao, HJ 2012, 'Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords', Applied Physics Letters, vol. 100, no. 10, 103112. https://doi.org/10.1063/1.3693383
Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords. / Tian, Yuan; Lu, Hongliang; Tian, Jifa et al.
In:
Applied Physics Letters, Vol. 100, No. 10, 103112, 05.03.2012.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords
AU - Tian, Yuan
AU - Lu, Hongliang
AU - Tian, Jifa
AU - Li, Chen
AU - Hui, Chao
AU - Shi, Xuezhao
AU - Huang, Yuan
AU - Shen, Chengmin
AU - Gao, Hong Jun
PY - 2012/3/5
Y1 - 2012/3/5
N2 - Magnesium-doped boron nanoswords were synthesized via a thermoreduction method. The as-prepared nanoswords are single crystalline and -rhombohedral (-rh) phase. Electrical transport measurements show that variable range hopping conductivity increases with temperature, and carrier mobility has a greater influence than carrier concentration. These results are consistent with the three dimensional Mott's model (M. Cutler and N. F. Mott, Phys. Rev. 181, 1336 (1969)) besides a high density of localized states at the Fermi level compared with bulk -rh boron. Conductivity of Mg-doped boron nanoswords is significantly lower than that of pure (free of magnesium) boron nanoswords. Electron energy loss spectroscopy studies confirm that the poorer conductivity arises from silicon against magnesium doping.
AB - Magnesium-doped boron nanoswords were synthesized via a thermoreduction method. The as-prepared nanoswords are single crystalline and -rhombohedral (-rh) phase. Electrical transport measurements show that variable range hopping conductivity increases with temperature, and carrier mobility has a greater influence than carrier concentration. These results are consistent with the three dimensional Mott's model (M. Cutler and N. F. Mott, Phys. Rev. 181, 1336 (1969)) besides a high density of localized states at the Fermi level compared with bulk -rh boron. Conductivity of Mg-doped boron nanoswords is significantly lower than that of pure (free of magnesium) boron nanoswords. Electron energy loss spectroscopy studies confirm that the poorer conductivity arises from silicon against magnesium doping.
UR - http://www.scopus.com/inward/record.url?scp=84863343274&partnerID=8YFLogxK
U2 - 10.1063/1.3693383
DO - 10.1063/1.3693383
M3 - Article
AN - SCOPUS:84863343274
SN - 0003-6951
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 10
M1 - 103112
ER -
Tian Y, Lu H, Tian J, Li C, Hui C, Shi X et al. Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords. Applied Physics Letters. 2012 Mar 5;100(10):103112. doi: 10.1063/1.3693383
