Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords

Yuan Tian; Hongliang Lu; Jifa Tian; Chen Li; Chao Hui; Xuezhao Shi; Yuan Huang; Chengmin Shen; Hong Jun Gao

doi:10.1063/1.3693383

Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords

Yuan Tian, Hongliang Lu, Jifa Tian, Chen Li, Chao Hui, Xuezhao Shi, Yuan Huang, Chengmin Shen, Hong Jun Gao^*

^*Corresponding author for this work

CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Magnesium-doped boron nanoswords were synthesized via a thermoreduction method. The as-prepared nanoswords are single crystalline and -rhombohedral (-rh) phase. Electrical transport measurements show that variable range hopping conductivity increases with temperature, and carrier mobility has a greater influence than carrier concentration. These results are consistent with the three dimensional Mott's model (M. Cutler and N. F. Mott, Phys. Rev. 181, 1336 (1969)) besides a high density of localized states at the Fermi level compared with bulk -rh boron. Conductivity of Mg-doped boron nanoswords is significantly lower than that of pure (free of magnesium) boron nanoswords. Electron energy loss spectroscopy studies confirm that the poorer conductivity arises from silicon against magnesium doping.

Original language	English
Article number	103112
Journal	Applied Physics Letters
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.3693383
Publication status	Published - 5 Mar 2012
Externally published	Yes

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title = "Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords",

abstract = "Magnesium-doped boron nanoswords were synthesized via a thermoreduction method. The as-prepared nanoswords are single crystalline and -rhombohedral (-rh) phase. Electrical transport measurements show that variable range hopping conductivity increases with temperature, and carrier mobility has a greater influence than carrier concentration. These results are consistent with the three dimensional Mott's model (M. Cutler and N. F. Mott, Phys. Rev. 181, 1336 (1969)) besides a high density of localized states at the Fermi level compared with bulk -rh boron. Conductivity of Mg-doped boron nanoswords is significantly lower than that of pure (free of magnesium) boron nanoswords. Electron energy loss spectroscopy studies confirm that the poorer conductivity arises from silicon against magnesium doping.",

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T1 - Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords

AU - Tian, Yuan

AU - Lu, Hongliang

AU - Tian, Jifa

AU - Li, Chen

AU - Hui, Chao

AU - Shi, Xuezhao

AU - Huang, Yuan

AU - Shen, Chengmin

AU - Gao, Hong Jun

PY - 2012/3/5

Y1 - 2012/3/5

N2 - Magnesium-doped boron nanoswords were synthesized via a thermoreduction method. The as-prepared nanoswords are single crystalline and -rhombohedral (-rh) phase. Electrical transport measurements show that variable range hopping conductivity increases with temperature, and carrier mobility has a greater influence than carrier concentration. These results are consistent with the three dimensional Mott's model (M. Cutler and N. F. Mott, Phys. Rev. 181, 1336 (1969)) besides a high density of localized states at the Fermi level compared with bulk -rh boron. Conductivity of Mg-doped boron nanoswords is significantly lower than that of pure (free of magnesium) boron nanoswords. Electron energy loss spectroscopy studies confirm that the poorer conductivity arises from silicon against magnesium doping.

AB - Magnesium-doped boron nanoswords were synthesized via a thermoreduction method. The as-prepared nanoswords are single crystalline and -rhombohedral (-rh) phase. Electrical transport measurements show that variable range hopping conductivity increases with temperature, and carrier mobility has a greater influence than carrier concentration. These results are consistent with the three dimensional Mott's model (M. Cutler and N. F. Mott, Phys. Rev. 181, 1336 (1969)) besides a high density of localized states at the Fermi level compared with bulk -rh boron. Conductivity of Mg-doped boron nanoswords is significantly lower than that of pure (free of magnesium) boron nanoswords. Electron energy loss spectroscopy studies confirm that the poorer conductivity arises from silicon against magnesium doping.

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Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords

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