TY - JOUR
T1 - In Situ Device-Level TEM Characterization Based on Ultra-Flexible Multilayer MoS2 Micro-Cantilever
AU - Hou, Chaojian
AU - Wang, Kun
AU - Zhang, Wenqi
AU - Chen, Donglei
AU - Wang, Xiaokai
AU - Fan, Lu
AU - Li, Chunyang
AU - Zhao, Jing
AU - Dong, Lixin
N1 - Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2023/7/13
Y1 - 2023/7/13
N2 - Current state-of-the-art in situ transmission electron microscopy (TEM) characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due to immature in situ TEM manufacturing technology and sufficient external coupled stimulus. These limitations seriously prevent the development of in situ device-level TEM characterization. Herein, a representative in situ opto-electromechanical TEM characterization platform is put forward by integrating an ultra-flexible micro-cantilever chip with optical, mechanical, and electrical coupling fields for the first time. On this platform, static and dynamic in situ device-level TEM characterizations are implemented by utilizing molybdenum disulfide (MoS2) nanoflake as channel material. E-beam modulation behavior in MoS2 transistors is demonstrated at ultra-high e-beam acceleration voltage (300 kV), stemming from inelastic scattering electron doping into MoS2 nanoflakes. Moreover, in situ dynamic bending MoS2 nanodevices without/with laser irradiation reveals asymmetric piezoresistive properties based on electromechanical effects and secondary enhanced photocurrent based on opto-electromechanical coupling effects, accompanied by real-time monitoring atom-level characterization. This approach provides a step toward advanced in situ device-level TEM characterization technology with excellent perception ability and inspires in situ TEM characterization with ultra-sensitive force feedback and light sensing.
AB - Current state-of-the-art in situ transmission electron microscopy (TEM) characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due to immature in situ TEM manufacturing technology and sufficient external coupled stimulus. These limitations seriously prevent the development of in situ device-level TEM characterization. Herein, a representative in situ opto-electromechanical TEM characterization platform is put forward by integrating an ultra-flexible micro-cantilever chip with optical, mechanical, and electrical coupling fields for the first time. On this platform, static and dynamic in situ device-level TEM characterizations are implemented by utilizing molybdenum disulfide (MoS2) nanoflake as channel material. E-beam modulation behavior in MoS2 transistors is demonstrated at ultra-high e-beam acceleration voltage (300 kV), stemming from inelastic scattering electron doping into MoS2 nanoflakes. Moreover, in situ dynamic bending MoS2 nanodevices without/with laser irradiation reveals asymmetric piezoresistive properties based on electromechanical effects and secondary enhanced photocurrent based on opto-electromechanical coupling effects, accompanied by real-time monitoring atom-level characterization. This approach provides a step toward advanced in situ device-level TEM characterization technology with excellent perception ability and inspires in situ TEM characterization with ultra-sensitive force feedback and light sensing.
KW - in situ device-level transmission electron microscopy characterization
KW - molybdenum disulfide transistors
KW - nanorobotic manipulation
KW - opto-electromechanical transmission electron microscopy system
KW - ultra-flexible micro-cantilevers
UR - http://www.scopus.com/inward/record.url?scp=85154039855&partnerID=8YFLogxK
U2 - 10.1002/adma.202301439
DO - 10.1002/adma.202301439
M3 - Article
C2 - 37010091
AN - SCOPUS:85154039855
SN - 0935-9648
VL - 35
JO - Advanced Materials
JF - Advanced Materials
IS - 28
M1 - 2301439
ER -