In Situ Device-Level TEM Characterization Based on Ultra-Flexible Multilayer MoS2 Micro-Cantilever

Chaojian Hou, Kun Wang, Wenqi Zhang, Donglei Chen, Xiaokai Wang, Lu Fan, Chunyang Li, Jing Zhao*, Lixin Dong*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Current state-of-the-art in situ transmission electron microscopy (TEM) characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due to immature in situ TEM manufacturing technology and sufficient external coupled stimulus. These limitations seriously prevent the development of in situ device-level TEM characterization. Herein, a representative in situ opto-electromechanical TEM characterization platform is put forward by integrating an ultra-flexible micro-cantilever chip with optical, mechanical, and electrical coupling fields for the first time. On this platform, static and dynamic in situ device-level TEM characterizations are implemented by utilizing molybdenum disulfide (MoS2) nanoflake as channel material. E-beam modulation behavior in MoS2 transistors is demonstrated at ultra-high e-beam acceleration voltage (300 kV), stemming from inelastic scattering electron doping into MoS2 nanoflakes. Moreover, in situ dynamic bending MoS2 nanodevices without/with laser irradiation reveals asymmetric piezoresistive properties based on electromechanical effects and secondary enhanced photocurrent based on opto-electromechanical coupling effects, accompanied by real-time monitoring atom-level characterization. This approach provides a step toward advanced in situ device-level TEM characterization technology with excellent perception ability and inspires in situ TEM characterization with ultra-sensitive force feedback and light sensing.

Original languageEnglish
Article number2301439
JournalAdvanced Materials
Volume35
Issue number28
DOIs
Publication statusPublished - 13 Jul 2023

Keywords

  • in situ device-level transmission electron microscopy characterization
  • molybdenum disulfide transistors
  • nanorobotic manipulation
  • opto-electromechanical transmission electron microscopy system
  • ultra-flexible micro-cantilevers

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Hou, C., Wang, K., Zhang, W., Chen, D., Wang, X., Fan, L., Li, C., Zhao, J., & Dong, L. (2023). In Situ Device-Level TEM Characterization Based on Ultra-Flexible Multilayer MoS2 Micro-Cantilever. Advanced Materials, 35(28), Article 2301439. https://doi.org/10.1002/adma.202301439