Abstract
n-Type organic/polymeric semiconductors with high electron mobilities are highly demanded for future flexible organic circuits. Except for developing a new conjugated backbone, recent studies show that side-chain engineering also plays an indispensable role in boosting the charge-transporting property. In this paper, we report a new polymer PNDI2T-DTD with a representative n-type naphthalene diimide (NDI)-bithiophene backbone for high-performance n-type flexible thin-film transistors through branching/linear side-chain engineering strategy. Serving as the flexible side chains, the linear/branching side-chain pattern is found to be effective in tuning the preaggregation behavior in solution and the packing ordering of polymeric chains, resulting in the improvement of thin-film crystallinity. The electron mobility of the thin film of PNDI2T-DTD on flexible substrates can reach 1.52 cm 2 V -1 s -1 , which is approximately five times higher than that of PNDI2T-DT with the same conjugated backbone and only branching alkyl chains.
Original language | English |
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Pages (from-to) | 15837-15844 |
Number of pages | 8 |
Journal | ACS applied materials & interfaces |
Volume | 11 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1 May 2019 |
Keywords
- conjugated polymer
- flexible field-effect transistor
- n-type polymeric semiconductor
- naphthalene diimide
- side chain