Improving Luttinger-liquid plasmons in carbon nanotubes by chemical doping

Xiaoling Tian; Qingyuan Gu; Jiahua Duan; Runkun Chen; Huaping Liu; Yanxue Hou; Jianing Chen

doi:10.1039/c8nr00310f

Improving Luttinger-liquid plasmons in carbon nanotubes by chemical doping

Xiaoling Tian, Qingyuan Gu, Jiahua Duan, Runkun Chen, Huaping Liu, Yanxue Hou^*, Jianing Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We realized the real-space imaging of Luttinger-liquid plasmons in semiconducting single-walled carbon nanotubes (s-SWCNTs) and studied the effects of chemical-doping-induced charge carrier density modulation on plasmons. Using scattering-type scanning near-field optical microscopy (s-SNOM), we compared the Luttinger-liquid plasmonic behavior in pre- and post-HNO₃-doped SWCNTs. Raman measurements revealed that the physical mechanism is P-type doping. Through HNO₃ doping, we effectively increased the charge carrier density in s-SWCNTs and achieved quantum plasmons simultaneously with strong confinement (λ₀/λ_p ≈ 70) and high quality factor (Q ≈ 20). The combination of high quality factor and strong subwavelength confinement in Luttinger-liquid plasmons is critical to the future application of plasmonic devices.

Original language	English
Pages (from-to)	6288-6293
Number of pages	6
Journal	Nanoscale
Volume	10
Issue number	14
DOIs	https://doi.org/10.1039/c8nr00310f
Publication status	Published - 14 Apr 2018
Externally published	Yes

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title = "Improving Luttinger-liquid plasmons in carbon nanotubes by chemical doping",

abstract = "We realized the real-space imaging of Luttinger-liquid plasmons in semiconducting single-walled carbon nanotubes (s-SWCNTs) and studied the effects of chemical-doping-induced charge carrier density modulation on plasmons. Using scattering-type scanning near-field optical microscopy (s-SNOM), we compared the Luttinger-liquid plasmonic behavior in pre- and post-HNO3-doped SWCNTs. Raman measurements revealed that the physical mechanism is P-type doping. Through HNO3 doping, we effectively increased the charge carrier density in s-SWCNTs and achieved quantum plasmons simultaneously with strong confinement (λ0/λp ≈ 70) and high quality factor (Q ≈ 20). The combination of high quality factor and strong subwavelength confinement in Luttinger-liquid plasmons is critical to the future application of plasmonic devices.",

author = "Xiaoling Tian and Qingyuan Gu and Jiahua Duan and Runkun Chen and Huaping Liu and Yanxue Hou and Jianing Chen",

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T1 - Improving Luttinger-liquid plasmons in carbon nanotubes by chemical doping

AU - Tian, Xiaoling

AU - Gu, Qingyuan

AU - Duan, Jiahua

AU - Chen, Runkun

AU - Liu, Huaping

AU - Hou, Yanxue

AU - Chen, Jianing

PY - 2018/4/14

Y1 - 2018/4/14

N2 - We realized the real-space imaging of Luttinger-liquid plasmons in semiconducting single-walled carbon nanotubes (s-SWCNTs) and studied the effects of chemical-doping-induced charge carrier density modulation on plasmons. Using scattering-type scanning near-field optical microscopy (s-SNOM), we compared the Luttinger-liquid plasmonic behavior in pre- and post-HNO3-doped SWCNTs. Raman measurements revealed that the physical mechanism is P-type doping. Through HNO3 doping, we effectively increased the charge carrier density in s-SWCNTs and achieved quantum plasmons simultaneously with strong confinement (λ0/λp ≈ 70) and high quality factor (Q ≈ 20). The combination of high quality factor and strong subwavelength confinement in Luttinger-liquid plasmons is critical to the future application of plasmonic devices.

AB - We realized the real-space imaging of Luttinger-liquid plasmons in semiconducting single-walled carbon nanotubes (s-SWCNTs) and studied the effects of chemical-doping-induced charge carrier density modulation on plasmons. Using scattering-type scanning near-field optical microscopy (s-SNOM), we compared the Luttinger-liquid plasmonic behavior in pre- and post-HNO3-doped SWCNTs. Raman measurements revealed that the physical mechanism is P-type doping. Through HNO3 doping, we effectively increased the charge carrier density in s-SWCNTs and achieved quantum plasmons simultaneously with strong confinement (λ0/λp ≈ 70) and high quality factor (Q ≈ 20). The combination of high quality factor and strong subwavelength confinement in Luttinger-liquid plasmons is critical to the future application of plasmonic devices.

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JO - Nanoscale

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ER -

Improving Luttinger-liquid plasmons in carbon nanotubes by chemical doping

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