Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric

Y. X. Ma; W. M. Tang; P. T. Lai

doi:10.1109/EDSSC.2018.8487159

Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric

Y. X. Ma, W. M. Tang, P. T. Lai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm²/V\cdot s and a small threshold voltage of-1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility ofthe device.

Original language	English
Title of host publication	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538662342
DOIs	https://doi.org/10.1109/EDSSC.2018.8487159
Publication status	Published - 9 Oct 2018
Externally published	Yes
Event	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 - Shenzhen, China Duration: 6 Jun 2018 → 8 Jun 2018

Publication series

Name	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Conference

Conference	2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Country/Territory	China
City	Shenzhen
Period	6/06/18 → 8/06/18

Keywords

NdHfON dielectric
Organic thin-film transistor
high-k

Access to Document

10.1109/EDSSC.2018.8487159

Cite this

Ma, Y. X., Tang, W. M., & Lai, P. T. (2018). Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 Article 8487159 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2018.8487159

Ma, Y. X. ; Tang, W. M. ; Lai, P. T. / Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric. 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

@inproceedings{4a750b77962b4d0e84e66732fdf257b8,

title = "Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric",

abstract = "Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm2/V\cdot s and a small threshold voltage of-1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility ofthe device.",

keywords = "NdHfON dielectric, Organic thin-film transistor, high-k",

author = "Ma, {Y. X.} and Tang, {W. M.} and Lai, {P. T.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 ; Conference date: 06-06-2018 Through 08-06-2018",

year = "2018",

month = oct,

day = "9",

doi = "10.1109/EDSSC.2018.8487159",

language = "English",

series = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018",

address = "United States",

}

Ma, YX, Tang, WM & Lai, PT 2018, Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric. in 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018., 8487159, 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Shenzhen, China, 6/06/18. https://doi.org/10.1109/EDSSC.2018.8487159

Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric. / Ma, Y. X.; Tang, W. M.; Lai, P. T.
2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8487159 (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric

AU - Ma, Y. X.

AU - Tang, W. M.

AU - Lai, P. T.

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm2/V\cdot s and a small threshold voltage of-1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility ofthe device.

AB - Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm2/V\cdot s and a small threshold voltage of-1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility ofthe device.

KW - NdHfON dielectric

KW - Organic thin-film transistor

KW - high-k

UR - http://www.scopus.com/inward/record.url?scp=85056298302&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2018.8487159

DO - 10.1109/EDSSC.2018.8487159

M3 - Conference contribution

AN - SCOPUS:85056298302

T3 - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

BT - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Y2 - 6 June 2018 through 8 June 2018

ER -

Ma YX, Tang WM, Lai PT. Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8487159. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018). doi: 10.1109/EDSSC.2018.8487159

Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric

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