Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

Yuan Huang; Huidong Zang; Jia Shiang Chen; Eli A. Sutter; Peter W. Sutter; Chang Yong Nam; Mircea Cotlet

doi:10.1063/1.4944781

Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

Yuan Huang, Huidong Zang, Jia Shiang Chen, Eli A. Sutter, Peter W. Sutter^*, Chang Yong Nam, Mircea Cotlet

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We report an improved photosensitivity in few-layer tin disulfide (SnS₂) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS₂ FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS₂-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS₂ is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QD photoluminescence and SnS₂ optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS₂. We also find enhanced charge carrier mobility in hybrid QD-SnS₂ FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.

Original language	English
Article number	123502
Journal	Applied Physics Letters
Volume	108
Issue number	12
DOIs	https://doi.org/10.1063/1.4944781
Publication status	Published - 21 Mar 2016
Externally published	Yes

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title = "Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity",

abstract = "We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QD photoluminescence and SnS2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS2. We also find enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.",

author = "Yuan Huang and Huidong Zang and Chen, {Jia Shiang} and Sutter, {Eli A.} and Sutter, {Peter W.} and Nam, {Chang Yong} and Mircea Cotlet",

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AU - Huang, Yuan

AU - Zang, Huidong

AU - Chen, Jia Shiang

AU - Sutter, Eli A.

AU - Sutter, Peter W.

AU - Nam, Chang Yong

AU - Cotlet, Mircea

PY - 2016/3/21

Y1 - 2016/3/21

N2 - We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QD photoluminescence and SnS2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS2. We also find enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.

AB - We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QD photoluminescence and SnS2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS2. We also find enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.

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Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

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