Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Shuailong Zhang; Enyuan Xie; Tongxing Yan; Wei Yang; Johannes Herrnsdof; Zheng Gong; Ian M. Watson; Erdan Gu; Martin D. Dawson; Xiaodong Hu

doi:10.1063/1.4931575

Hole transport assisted by the piezoelectric field in In_0.4Ga_0.6N/GaN quantum wells under electrical injection

Shuailong Zhang, Enyuan Xie, Tongxing Yan, Wei Yang, Johannes Herrnsdof, Zheng Gong, Ian M. Watson, Erdan Gu, Martin D. Dawson, Xiaodong Hu

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm². The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

Original language	English
Article number	125709
Journal	Journal of Applied Physics
Volume	118
Issue number	12
DOIs	https://doi.org/10.1063/1.4931575
Publication status	Published - 28 Sept 2015
Externally published	Yes

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@article{185cab0fe52243ebbc089998fd986883,

title = "Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection",

abstract = "The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.",

author = "Shuailong Zhang and Enyuan Xie and Tongxing Yan and Wei Yang and Johannes Herrnsdof and Zheng Gong and Watson, {Ian M.} and Erdan Gu and Dawson, {Martin D.} and Xiaodong Hu",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = sep,

day = "28",

doi = "10.1063/1.4931575",

language = "English",

volume = "118",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

AU - Zhang, Shuailong

AU - Xie, Enyuan

AU - Yan, Tongxing

AU - Yang, Wei

AU - Herrnsdof, Johannes

AU - Gong, Zheng

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Dawson, Martin D.

AU - Hu, Xiaodong

PY - 2015/9/28

Y1 - 2015/9/28

N2 - The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

AB - The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

UR - http://www.scopus.com/inward/record.url?scp=84942903739&partnerID=8YFLogxK

U2 - 10.1063/1.4931575

DO - 10.1063/1.4931575

M3 - Article

AN - SCOPUS:84942903739

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 125709

ER -

Hole transport assisted by the piezoelectric field in In_0.4Ga_0.6N/GaN quantum wells under electrical injection

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