High electrostrictive strain induced by defect dipoles in acceptor-doped (K0.5Na0.5)NbO3 ceramics

Ye Jing Dai, Yong Jie Zhao, Zhe Zhao, Zhi Hao Zhao, Qi Wu Zhou, Xiao Wen Zhang

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Acceptor doping is an efficient method to improve ferroelectric material performance through the formation of defect dipoles. Here, a high electrostrictive strain of 0.160.19%, and large d∗33 of >300 pm V-1 are obtained in CuO-doped (K0.5Na0.5)NbO3 ceramics. We analyzed the orientation relationship and the interaction between defect dipole polarization (Pd) along 〈0 0 1〉 orientation and spontaneous polarization (Ps) parallel to 〈1 1 0〈 in orthorhombic (K0.5Na0.5)NbO3. Thus, a coupling effect mechanism was suggested to explain how the Pd and Ps can work together to contribute to the electrostrictive strains in this lead-free piezoelectric ceramic.

Original languageEnglish
Article number275303
JournalJournal Physics D: Applied Physics
Volume49
Issue number27
DOIs
Publication statusPublished - 7 Jun 2016

Keywords

  • acceptor doping
  • defects
  • lead-free ceramics
  • perovskite
  • piezoelectric properties

Fingerprint

Dive into the research topics of 'High electrostrictive strain induced by defect dipoles in acceptor-doped (K0.5Na0.5)NbO3 ceramics'. Together they form a unique fingerprint.

Cite this