Half-metallic silicene and germanene nanoribbons: Towards high-performance spintronics device

Yangyang Wang; Jiaxin Zheng; Zeyuan Ni; Ruixiang Fei; Qihang Liu; Ruge Quhe; Chengyong Xu; Jing Zhou; Zhengxiang Gao; Jing Lu

doi:10.1142/S1793292012500373

Half-metallic silicene and germanene nanoribbons: Towards high-performance spintronics device

Yangyang Wang, Jiaxin Zheng, Zeyuan Ni, Ruixiang Fei, Qihang Liu, Ruge Quhe, Chengyong Xu, Jing Zhou, Zhengxiang Gao, Jing Lu^*

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Article › peer-review

109 Citations (Scopus)

Abstract

By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

Original language	English
Article number	1250037
Journal	Nano
Volume	7
Issue number	5
DOIs	https://doi.org/10.1142/S1793292012500373
Publication status	Published - Oct 2012
Externally published	Yes

Keywords

First-principles calculation
Germanene nanoribbon
Half-metallicity
Silicene nanoribbon
Spin field effect transistor
Spin-filter

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10.1142/S1793292012500373

Cite this

@article{5c08c647d5294b769fd94a92bf2e361c,

title = "Half-metallic silicene and germanene nanoribbons: Towards high-performance spintronics device",

abstract = "By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.",

keywords = "First-principles calculation, Germanene nanoribbon, Half-metallicity, Silicene nanoribbon, Spin field effect transistor, Spin-filter",

author = "Yangyang Wang and Jiaxin Zheng and Zeyuan Ni and Ruixiang Fei and Qihang Liu and Ruge Quhe and Chengyong Xu and Jing Zhou and Zhengxiang Gao and Jing Lu",

year = "2012",

month = oct,

doi = "10.1142/S1793292012500373",

language = "English",

volume = "7",

journal = "Nano",

issn = "1793-2920",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "5",

}

TY - JOUR

T1 - Half-metallic silicene and germanene nanoribbons

T2 - Towards high-performance spintronics device

AU - Wang, Yangyang

AU - Zheng, Jiaxin

AU - Ni, Zeyuan

AU - Fei, Ruixiang

AU - Liu, Qihang

AU - Quhe, Ruge

AU - Xu, Chengyong

AU - Zhou, Jing

AU - Gao, Zhengxiang

AU - Lu, Jing

PY - 2012/10

Y1 - 2012/10

N2 - By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

AB - By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

KW - First-principles calculation

KW - Germanene nanoribbon

KW - Half-metallicity

KW - Silicene nanoribbon

KW - Spin field effect transistor

KW - Spin-filter

UR - http://www.scopus.com/inward/record.url?scp=84871344693&partnerID=8YFLogxK

U2 - 10.1142/S1793292012500373

DO - 10.1142/S1793292012500373

M3 - Article

AN - SCOPUS:84871344693

SN - 1793-2920

VL - 7

JO - Nano

JF - Nano

IS - 5

M1 - 1250037

ER -

Half-metallic silicene and germanene nanoribbons: Towards high-performance spintronics device

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Keywords

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