Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

Wende Xiao; Qinlin Quo; Qikun Xue; E. G. Wang

doi:10.1063/1.1609636

Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

Wende Xiao, Qinlin Quo, Qikun Xue, E. G. Wang

CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.

Original language	English
Pages (from-to)	4847-4852
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1609636
Publication status	Published - 15 Oct 2003
Externally published	Yes

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abstract = "The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.",

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AU - Xiao, Wende

AU - Quo, Qinlin

AU - Xue, Qikun

AU - Wang, E. G.

PY - 2003/10/15

Y1 - 2003/10/15

N2 - The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.

AB - The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.

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Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

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