Formation of SiO2 thin films through plasma- enhanced chemical vapor deposition using SiH4/Ar/N2O

Jingjing Zhang; Jingquan Guo; Qiutong Zhao; Lihui Yu; Shujun Ye; Hongxing Yin; Yeliang Wang

doi:10.1016/j.tsf.2024.140348

Formation of SiO₂ thin films through plasma- enhanced chemical vapor deposition using SiH₄/Ar/N₂O

Jingjing Zhang, Jingquan Guo, Qiutong Zhao, Lihui Yu, Shujun Ye^*, Hongxing Yin, Yeliang Wang

^*Corresponding author for this work

Advanced Research Institute of Multidisciplinary Science

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

SiO₂ films and their formation technologies are critical for the fabrication of Si-based integrated circuits (ICs). SiO₂ films fabricated using plasma-enhanced chemical vapor deposition (PECVD) have become increasingly important because of the increasing trend of three-dimensional (3D) architectures in ICs. SiO₂ films formed by PECVD have been widely studied for over 40 years; however, owing to the complex plasma reactions and the differences in system conditions, the relationship between the experimental parameters and film characteristics are disputed. In this study, focusing on the two important characteristics (surface morphology and deposition rate) of SiO₂ films for 3 D ICs manufacturing, SiO₂ film growth was systematically investigated via SiH₄/Ar/N₂O in PECVD; a theoretical reaction process model (including gas-phase reaction, chemical adsorption, and surface reaction) bridging the experimental parameters (chamber pressure, gas ratio, radio frequency power, and substrate temperature) and characteristics (surface morphology and deposition rate) of SiO₂ films was established. This study contributes to the precise formation of sub-100 nanometer SiO₂ films using PECVD for manufacturing 3 D ICs.

Original language	English
Article number	140348
Journal	Thin Solid Films
Volume	797
DOIs	https://doi.org/10.1016/j.tsf.2024.140348
Publication status	Published - 30 May 2024

Keywords

3d integrated circuits
Gate all around
Plasma-enhanced chemical vapor deposition
Silicon dioxide

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title = "Formation of SiO2 thin films through plasma- enhanced chemical vapor deposition using SiH4/Ar/N2O",

abstract = "SiO2 films and their formation technologies are critical for the fabrication of Si-based integrated circuits (ICs). SiO2 films fabricated using plasma-enhanced chemical vapor deposition (PECVD) have become increasingly important because of the increasing trend of three-dimensional (3D) architectures in ICs. SiO2 films formed by PECVD have been widely studied for over 40 years; however, owing to the complex plasma reactions and the differences in system conditions, the relationship between the experimental parameters and film characteristics are disputed. In this study, focusing on the two important characteristics (surface morphology and deposition rate) of SiO2 films for 3 D ICs manufacturing, SiO2 film growth was systematically investigated via SiH4/Ar/N2O in PECVD; a theoretical reaction process model (including gas-phase reaction, chemical adsorption, and surface reaction) bridging the experimental parameters (chamber pressure, gas ratio, radio frequency power, and substrate temperature) and characteristics (surface morphology and deposition rate) of SiO2 films was established. This study contributes to the precise formation of sub-100 nanometer SiO2 films using PECVD for manufacturing 3 D ICs.",

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author = "Jingjing Zhang and Jingquan Guo and Qiutong Zhao and Lihui Yu and Shujun Ye and Hongxing Yin and Yeliang Wang",

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year = "2024",

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doi = "10.1016/j.tsf.2024.140348",

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AU - Zhang, Jingjing

AU - Guo, Jingquan

AU - Zhao, Qiutong

AU - Yu, Lihui

AU - Ye, Shujun

AU - Yin, Hongxing

AU - Wang, Yeliang

PY - 2024/5/30

Y1 - 2024/5/30

N2 - SiO2 films and their formation technologies are critical for the fabrication of Si-based integrated circuits (ICs). SiO2 films fabricated using plasma-enhanced chemical vapor deposition (PECVD) have become increasingly important because of the increasing trend of three-dimensional (3D) architectures in ICs. SiO2 films formed by PECVD have been widely studied for over 40 years; however, owing to the complex plasma reactions and the differences in system conditions, the relationship between the experimental parameters and film characteristics are disputed. In this study, focusing on the two important characteristics (surface morphology and deposition rate) of SiO2 films for 3 D ICs manufacturing, SiO2 film growth was systematically investigated via SiH4/Ar/N2O in PECVD; a theoretical reaction process model (including gas-phase reaction, chemical adsorption, and surface reaction) bridging the experimental parameters (chamber pressure, gas ratio, radio frequency power, and substrate temperature) and characteristics (surface morphology and deposition rate) of SiO2 films was established. This study contributes to the precise formation of sub-100 nanometer SiO2 films using PECVD for manufacturing 3 D ICs.

AB - SiO2 films and their formation technologies are critical for the fabrication of Si-based integrated circuits (ICs). SiO2 films fabricated using plasma-enhanced chemical vapor deposition (PECVD) have become increasingly important because of the increasing trend of three-dimensional (3D) architectures in ICs. SiO2 films formed by PECVD have been widely studied for over 40 years; however, owing to the complex plasma reactions and the differences in system conditions, the relationship between the experimental parameters and film characteristics are disputed. In this study, focusing on the two important characteristics (surface morphology and deposition rate) of SiO2 films for 3 D ICs manufacturing, SiO2 film growth was systematically investigated via SiH4/Ar/N2O in PECVD; a theoretical reaction process model (including gas-phase reaction, chemical adsorption, and surface reaction) bridging the experimental parameters (chamber pressure, gas ratio, radio frequency power, and substrate temperature) and characteristics (surface morphology and deposition rate) of SiO2 films was established. This study contributes to the precise formation of sub-100 nanometer SiO2 films using PECVD for manufacturing 3 D ICs.

KW - 3d integrated circuits

KW - Gate all around

KW - Plasma-enhanced chemical vapor deposition

KW - Silicon dioxide

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Formation of SiO₂ thin films through plasma- enhanced chemical vapor deposition using SiH₄/Ar/N₂O

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