TY - JOUR
T1 - Flexible Transparent Near-Infrared Photodetector Based on 2D Ti3C2 MXene-Te Van Der Waals Heterostructures†
AU - Hu, Chuqiao
AU - Li, La
AU - Shen, Guozhen
N1 - Publisher Copyright:
© 2021 SIOC, CAS, Shanghai and Wiley-VCH GmbH
PY - 2021/8
Y1 - 2021/8
N2 - Ti3C2 MXene serving as superior electrical conductors presents more specific performance such as transparency, conductivity than gold (Au), and even could form a heterostructure with active materials of the functional devices. Here, a Ti3C2 MXene-Te microplate van der Waals heterostructure based transparent near-infrared photodetector (PD) is exploited. Compared with Au-Te PD, the on-off ratio of the Ti3C2-Te PD is improved by seven orders of magnitude and reaches 9.51 × 107 under 1064 nm laser illuminations. Benefiting from the utilization of flexible PET substrate and Ti3C2 conductors in manufacturing PD devices, the Ti3C2-Te PD exhibits excellent flexibility with no noticeable response change after being bent for different states and times. Moreover, 63% transmittance of the fabricated PD devices over the 500—1000 nm wavelength range is obtained. All the above results demonstrate the tremendous potential in wearable optoelectronics.
AB - Ti3C2 MXene serving as superior electrical conductors presents more specific performance such as transparency, conductivity than gold (Au), and even could form a heterostructure with active materials of the functional devices. Here, a Ti3C2 MXene-Te microplate van der Waals heterostructure based transparent near-infrared photodetector (PD) is exploited. Compared with Au-Te PD, the on-off ratio of the Ti3C2-Te PD is improved by seven orders of magnitude and reaches 9.51 × 107 under 1064 nm laser illuminations. Benefiting from the utilization of flexible PET substrate and Ti3C2 conductors in manufacturing PD devices, the Ti3C2-Te PD exhibits excellent flexibility with no noticeable response change after being bent for different states and times. Moreover, 63% transmittance of the fabricated PD devices over the 500—1000 nm wavelength range is obtained. All the above results demonstrate the tremendous potential in wearable optoelectronics.
KW - Conducting materials
KW - Flexible near infrared photodetector
KW - Semiconductors
KW - Tellurium
KW - TiCT MXene
KW - Transparent electronics
UR - http://www.scopus.com/inward/record.url?scp=85108840466&partnerID=8YFLogxK
U2 - 10.1002/cjoc.202100229
DO - 10.1002/cjoc.202100229
M3 - Article
AN - SCOPUS:85108840466
SN - 1001-604X
VL - 39
SP - 2141
EP - 2146
JO - Chinese Journal of Chemistry
JF - Chinese Journal of Chemistry
IS - 8
ER -