Flexible photodetectors with single-crystalline GaTe nanowires

Gang Yu, Zhe Liu, Xuming Xie, Xia Ouyang, Guozhen Shen*

*Corresponding author for this work

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Abstract

GaTe is an important layer-structured III-VI compound semiconductor with superior optical and electrical properties. In this paper, single-crystalline gallium telluride nanowires were successfully synthesized via a conventional chemical vapor deposition method. Single nanowire field-effect transistors revealed typical p-type semiconductor behavior of the GaTe nanowires, which showed substantial response to light irradiation with broad wavelengths ranging from 350 to 800 nm. Flexible photodetectors on a PET substrate were also fabricated with a high responsivity and an external quantum efficiency of 20.75 A W-1 and 3.96 × 103%, respectively. Besides, the flexible photodetectors showed excellent mechanical flexibility and stable electrical properties under different bending states, revealing promising applications in future flexible optoelectronic devices. This journal is

Original languageEnglish
Pages (from-to)6104-6110
Number of pages7
JournalJournal of Materials Chemistry C
Volume2
Issue number30
DOIs
Publication statusPublished - 14 Aug 2014
Externally publishedYes

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Yu, G., Liu, Z., Xie, X., Ouyang, X., & Shen, G. (2014). Flexible photodetectors with single-crystalline GaTe nanowires. Journal of Materials Chemistry C, 2(30), 6104-6110. https://doi.org/10.1039/c4tc00917g