Flexible GaN-based microscale light-emitting diodes with a batch transfer by wet etching

Jiangwen Wang, Qilin Hua, Wei Sha, Jiwei Chen, Xinhuan Dai, Jianan Niu, Junfeng Xiao, Weiguo Hu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Flexible inorganic GaN-based microscale light-emitting diodes (µLEDs) show potential applications in wearable electronics, biomedical engineering, and human-machine interfaces. However, developing cost-effective products remains a challenge for flexible GaN-based µLEDs. Here, a facile and stable method is proposed to fabricate flexible GaN-based µLEDs from silicon substrates in an array-scale manner by wet etching. Circular and square µLED arrays with a size and pitch of 500 µm were fabricated and then transferred to a flexible acrylic/copper substrate. The as-fabricated flexible µLEDs can maintain their structure intact while exhibiting a significant increase in external quantum efficiency. This Letter promotes the application of simple and low-cost flexible µLED devices, especially for virtual displays, wearables, and curvilinear displays.

Original languageEnglish
Pages (from-to)5052-5055
Number of pages4
JournalOptics Letters
Volume47
Issue number19
DOIs
Publication statusPublished - 1 Oct 2022
Externally publishedYes

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Wang, J., Hua, Q., Sha, W., Chen, J., Dai, X., Niu, J., Xiao, J., & Hu, W. (2022). Flexible GaN-based microscale light-emitting diodes with a batch transfer by wet etching. Optics Letters, 47(19), 5052-5055. https://doi.org/10.1364/OL.471017