First principles studies of the self trapped hole and the fluorine adsorption on the SrF2(1 1 1) surface

Ran Jia, Zhijun Yi*, Chunsheng Liu, Hongting Shi, Hongxing Zhang, Roberts I. Eglitis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

By using density functional theory (DFT) with hybrid exchange potentials, namely DFT-B3PW, the ground states of self trapped hole and adsorbed fluorine atom on the strontium fluoride (1 1 1) surface are investigated. The self trapped hole at an interstitial anion site is denoted by H-center. In both the H-center and fluorine adsorption cases, the strong relaxations due to the surface effects are observed. In the H-center case, the unpaired electron distributes almost equally over two H-center atoms. This equivalent distribution of the unpaired electron is totally different from that of the bulk H-center [J. Phys. Chem. A 114 (2010) 8444]. The other case with an adsorbed fluorine atom lying outside the slab has a more polarized charge distribution with respect to the H-center case. The surface effects and the polarizations of H centers can be well explained with the calculated electric fields on the surfaces. A new β-hole band located 2.80 eV above the top of valence band (VB) is observed in the case of fluorine adsorption, and a new β-hole band located 4.26 eV above the VB is also observed in the H-center case. Specifically, the β-hole bands are primarily composed of p z-orbitals, which are localized on the defect points.

Original languageEnglish
Pages (from-to)9-14
Number of pages6
JournalComputational Materials Science
Volume73
DOIs
Publication statusPublished - 2013

Keywords

  • Band structure
  • DFT-B3PW
  • Electronic structure
  • Fluorine adsorption
  • H-center
  • Strontium fluoride
  • Surface effect

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