TY - JOUR
T1 - First-principles investigation of dynamical properties of molecular devices under a steplike pulse
AU - Xing, Yanxia
AU - Wang, Bin
AU - Wang, Jian
PY - 2010/11/10
Y1 - 2010/11/10
N2 - We report a computationally tractable approach to first-principles investigation of time-dependent current of molecular devices under a steplike pulse. For molecular devices, all the resonant states below Fermi level contribute to the time-dependent current. Hence calculation beyond wideband limit must be carried out for a quantitative analysis of transient dynamics of molecules devices. Based on the exact nonequilibrium Green's-function (NEGF) formalism of calculating the transient current, we develop two approximate schemes going beyond the wideband limit, they are all suitable for first-principles calculation using the NEGF combined with density-functional theory. Benchmark test has been done by comparing with the exact solution of a single level quantum dot system. Good agreement has been reached for two approximate schemes. As an application, we calculate the transient current using the first approximated formula with opposite voltage VL (t) =- VR (t) in two molecular structures: Al-C5 -Al and Al-C60 -Al. As illustrated in these examples, our formalism can be easily implemented for real molecular devices. Importantly, our new formula has captured the essential physics of dynamical properties of molecular devices and gives the correct steady state current at t=0 and t→∞.
AB - We report a computationally tractable approach to first-principles investigation of time-dependent current of molecular devices under a steplike pulse. For molecular devices, all the resonant states below Fermi level contribute to the time-dependent current. Hence calculation beyond wideband limit must be carried out for a quantitative analysis of transient dynamics of molecules devices. Based on the exact nonequilibrium Green's-function (NEGF) formalism of calculating the transient current, we develop two approximate schemes going beyond the wideband limit, they are all suitable for first-principles calculation using the NEGF combined with density-functional theory. Benchmark test has been done by comparing with the exact solution of a single level quantum dot system. Good agreement has been reached for two approximate schemes. As an application, we calculate the transient current using the first approximated formula with opposite voltage VL (t) =- VR (t) in two molecular structures: Al-C5 -Al and Al-C60 -Al. As illustrated in these examples, our formalism can be easily implemented for real molecular devices. Importantly, our new formula has captured the essential physics of dynamical properties of molecular devices and gives the correct steady state current at t=0 and t→∞.
UR - http://www.scopus.com/inward/record.url?scp=78649737061&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.82.205112
DO - 10.1103/PhysRevB.82.205112
M3 - Article
AN - SCOPUS:78649737061
SN - 1098-0121
VL - 82
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 205112
ER -