TY - JOUR
T1 - First-principles calculations on surface hydroxyl impurities in BaF 2
AU - Shi, H.
AU - Jia, R.
AU - Eglitis, R. I.
PY - 2012/2
Y1 - 2012/2
N2 - OH - impurities located near the (1 1 1) BaF 2 surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely DFT-B3PW. Twenty surface OH - configurations were studied, and the hydroxyls located on the first surface layer are the energetically most favorable configurations. For the (1 1 1) BaF 2 surface atomic layers, the surface hydroxyls lead to a remarkable XY-translation and a dilating effect in the Z-direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that the surface effect strengthens the covalency of surface OH - impurities. The studies on band structures and density of states (DOS) of the surface OH --impurity systems demonstrate that there are two defect levels induced by OH - impurities. The O p x and p y orbitals form two superposed occupied O bands, located above the valence bands (VB), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands (CB). Because of the surface effect, the O bands move downward, toward the VB with respect to these bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption.
AB - OH - impurities located near the (1 1 1) BaF 2 surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely DFT-B3PW. Twenty surface OH - configurations were studied, and the hydroxyls located on the first surface layer are the energetically most favorable configurations. For the (1 1 1) BaF 2 surface atomic layers, the surface hydroxyls lead to a remarkable XY-translation and a dilating effect in the Z-direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that the surface effect strengthens the covalency of surface OH - impurities. The studies on band structures and density of states (DOS) of the surface OH --impurity systems demonstrate that there are two defect levels induced by OH - impurities. The O p x and p y orbitals form two superposed occupied O bands, located above the valence bands (VB), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands (CB). Because of the surface effect, the O bands move downward, toward the VB with respect to these bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption.
KW - BaF
KW - Band structures
KW - DFT
KW - Electronic structure
KW - Surface hydroxyl impurities
UR - http://www.scopus.com/inward/record.url?scp=80054726397&partnerID=8YFLogxK
U2 - 10.1016/j.commatsci.2011.09.014
DO - 10.1016/j.commatsci.2011.09.014
M3 - Article
AN - SCOPUS:80054726397
SN - 0927-0256
VL - 53
SP - 220
EP - 225
JO - Computational Materials Science
JF - Computational Materials Science
IS - 1
ER -