First-principles calculations on surface hydroxyl impurities in BaF 2

H. Shi*, R. Jia, R. I. Eglitis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

OH - impurities located near the (1 1 1) BaF 2 surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely DFT-B3PW. Twenty surface OH - configurations were studied, and the hydroxyls located on the first surface layer are the energetically most favorable configurations. For the (1 1 1) BaF 2 surface atomic layers, the surface hydroxyls lead to a remarkable XY-translation and a dilating effect in the Z-direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that the surface effect strengthens the covalency of surface OH - impurities. The studies on band structures and density of states (DOS) of the surface OH --impurity systems demonstrate that there are two defect levels induced by OH - impurities. The O p x and p y orbitals form two superposed occupied O bands, located above the valence bands (VB), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands (CB). Because of the surface effect, the O bands move downward, toward the VB with respect to these bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption.

Original languageEnglish
Pages (from-to)220-225
Number of pages6
JournalComputational Materials Science
Volume53
Issue number1
DOIs
Publication statusPublished - Feb 2012

Keywords

  • BaF
  • Band structures
  • DFT
  • Electronic structure
  • Surface hydroxyl impurities

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