Abstract
This paper studies the electronic structure and native defects in transparent conducting oxides CuScO2 and CuYO2 using the first-principle calculations. Some typical native copper-related and oxygen-related defects, such as vacancy, interstitials, and antisites in their relevant charge state are considered. The results of calculation show that, CuMO2(M Sc, Y) is impossible to show n-type conductivity ability. It finds that copper vacancy and oxygen interstitial have relatively low formation energy and they are the relevant defects in CuScO2 and CuYO 2. Copper vacancy is the most efficient acceptor, and under O-rich condition oxygen antisite also becomes important acceptor and plays an important role in p-type conductivity.
Original language | English |
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Pages (from-to) | 4279-4284 |
Number of pages | 6 |
Journal | Chinese Physics B |
Volume | 17 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
Keywords
- CuMO
- Native defects
- Vienna ab-initio simulation package (VASP)