Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition

Jing Wang

doi:10.1116/1.590790

Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition

Jing Wang^*

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The ion beam sputtering technique was employed to prepare diamondlike carbon (DLC) films at nearly room temperature. Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structure property. The sp³ fraction was found to strongly depend on the bombarding ion energy, giving a highly sp³ bonded DLC at ion beam bombarding energies around 800 eV. The emission characteristics of these amorphous DLC films were compared. Field emission from DLC deposited with higher bombarding energies exhibit enhanced emission properties. High electron emission current, about 370 μA over a 1 cm² cathode area, was obtained with an electric field of 18.5 V/μm. The mechanism for electron emission from DLC films is also discussed.

Original language	English
Pages (from-to)	1567-1569
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.590790
Publication status	Published - 1999
Externally published	Yes

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Wang, J. (1999). Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17(4), 1567-1569. https://doi.org/10.1116/1.590790

@article{396aeee36b824fb8836df6ba83aeb0d6,

title = "Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition",

abstract = "The ion beam sputtering technique was employed to prepare diamondlike carbon (DLC) films at nearly room temperature. Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structure property. The sp3 fraction was found to strongly depend on the bombarding ion energy, giving a highly sp3 bonded DLC at ion beam bombarding energies around 800 eV. The emission characteristics of these amorphous DLC films were compared. Field emission from DLC deposited with higher bombarding energies exhibit enhanced emission properties. High electron emission current, about 370 μA over a 1 cm2 cathode area, was obtained with an electric field of 18.5 V/μm. The mechanism for electron emission from DLC films is also discussed.",

author = "Jing Wang",

year = "1999",

doi = "10.1116/1.590790",

language = "English",

volume = "17",

pages = "1567--1569",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition

AU - Wang, Jing

PY - 1999

Y1 - 1999

N2 - The ion beam sputtering technique was employed to prepare diamondlike carbon (DLC) films at nearly room temperature. Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structure property. The sp3 fraction was found to strongly depend on the bombarding ion energy, giving a highly sp3 bonded DLC at ion beam bombarding energies around 800 eV. The emission characteristics of these amorphous DLC films were compared. Field emission from DLC deposited with higher bombarding energies exhibit enhanced emission properties. High electron emission current, about 370 μA over a 1 cm2 cathode area, was obtained with an electric field of 18.5 V/μm. The mechanism for electron emission from DLC films is also discussed.

AB - The ion beam sputtering technique was employed to prepare diamondlike carbon (DLC) films at nearly room temperature. Simultaneous ion beam bombardment during film growth was also conducted in order to study the bombardment effects. Raman spectroscopy was used to evaluate the structure property. The sp3 fraction was found to strongly depend on the bombarding ion energy, giving a highly sp3 bonded DLC at ion beam bombarding energies around 800 eV. The emission characteristics of these amorphous DLC films were compared. Field emission from DLC deposited with higher bombarding energies exhibit enhanced emission properties. High electron emission current, about 370 μA over a 1 cm2 cathode area, was obtained with an electric field of 18.5 V/μm. The mechanism for electron emission from DLC films is also discussed.

UR - http://www.scopus.com/inward/record.url?scp=1642427027&partnerID=8YFLogxK

U2 - 10.1116/1.590790

DO - 10.1116/1.590790

M3 - Article

AN - SCOPUS:1642427027

SN - 1071-1023

VL - 17

SP - 1567

EP - 1569

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition

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