Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning

H. D. Zhang; M. Yu; J. C. Zhang; C. H. Sheng; X. Yan; W. P. Han; Y. C. Liu; S. Chen; G. Z. Shen; Y. Z. Long

doi:10.1039/c5nr02191j

Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning

H. D. Zhang^*, M. Yu, J. C. Zhang, C. H. Sheng, X. Yan, W. P. Han, Y. C. Liu, S. Chen, G. Z. Shen, Y. Z. Long

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

Original language	English
Pages (from-to)	10513-10518
Number of pages	6
Journal	Nanoscale
Volume	7
Issue number	23
DOIs	https://doi.org/10.1039/c5nr02191j
Publication status	Published - 21 Jun 2015
Externally published	Yes

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@article{b0fb25ca38534aa4a83d400806f48219,

title = "Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning",

abstract = "La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.",

author = "Zhang, {H. D.} and M. Yu and Zhang, {J. C.} and Sheng, {C. H.} and X. Yan and Han, {W. P.} and Liu, {Y. C.} and S. Chen and Shen, {G. Z.} and Long, {Y. Z.}",

note = "Publisher Copyright: {\textcopyright} 2014 The Royal Society of Chemistry.",

year = "2015",

month = jun,

day = "21",

doi = "10.1039/c5nr02191j",

language = "English",

volume = "7",

pages = "10513--10518",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "23",

}

TY - JOUR

T1 - Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning

AU - Zhang, H. D.

AU - Yu, M.

AU - Zhang, J. C.

AU - Sheng, C. H.

AU - Yan, X.

AU - Han, W. P.

AU - Liu, Y. C.

AU - Chen, S.

AU - Shen, G. Z.

AU - Long, Y. Z.

PY - 2015/6/21

Y1 - 2015/6/21

N2 - La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

AB - La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.

UR - http://www.scopus.com/inward/record.url?scp=84930852031&partnerID=8YFLogxK

U2 - 10.1039/c5nr02191j

DO - 10.1039/c5nr02191j

M3 - Article

AN - SCOPUS:84930852031

SN - 2040-3364

VL - 7

SP - 10513

EP - 10518

JO - Nanoscale

JF - Nanoscale

IS - 23

ER -

Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning

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