Experimental realization of two-dimensional Dirac nodal line fermions in monolayer Cu2Si

Baojie Feng, Botao Fu, Shusuke Kasamatsu, Suguru Ito, Peng Cheng, Cheng Cheng Liu, Ya Feng, Shilong Wu, Sanjoy K. Mahatha, Polina Sheverdyaeva, Paolo Moras, Masashi Arita, Osamu Sugino, Tai Chang Chiang, Kenya Shimada, Koji Miyamoto, Taichi Okuda, Kehui Wu, Lan Chen*, Yugui YaoIwao Matsuda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

236 Citations (Scopus)

Abstract

Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a platform to study the novel physical properties in two-dimensional Dirac materials and provide opportunities to realize high-speed low-dissipation devices.

Original languageEnglish
Article number1007
JournalNature Communications
Volume8
Issue number1
DOIs
Publication statusPublished - 1 Dec 2017

Fingerprint

Dive into the research topics of 'Experimental realization of two-dimensional Dirac nodal line fermions in monolayer Cu2Si'. Together they form a unique fingerprint.

Cite this