Zhai, L., Gebre, S. T., Chen, B., Xu, D., Chen, J., Li, Z., Liu, Y., Yang, H., Ling, C., Ge, Y., Zhai, W., Chen, C., Ma, L., Zhang, Q., Li, X., Yan, Y., Huang, X., Li, L., Guan, Z., ... Wu, X. J. (2023). Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer. Nature Communications, 14(1), Article 2538. https://doi.org/10.1038/s41467-023-38237-7
@article{94e2dbcda0ad4be29c816bce5faf9977,
title = "Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer",
abstract = "Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.",
author = "Li Zhai and Gebre, {Sara T.} and Bo Chen and Dan Xu and Junze Chen and Zijian Li and Yawei Liu and Hua Yang and Chongyi Ling and Yiyao Ge and Wei Zhai and Changsheng Chen and Lu Ma and Qinghua Zhang and Xuefei Li and Yujie Yan and Xinyu Huang and Lujiang Li and Zhiqiang Guan and Tao, {Chen Lei} and Zhiqi Huang and Hongyi Wang and Jinze Liang and Ye Zhu and Lee, {Chun Sing} and Peng Wang and Chunfeng Zhang and Lin Gu and Yonghua Du and Tianquan Lian and Hua Zhang and Wu, {Xue Jun}",
note = "Publisher Copyright: {\textcopyright} 2023, The Author(s).",
year = "2023",
month = dec,
doi = "10.1038/s41467-023-38237-7",
language = "English",
volume = "14",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "1",
}
Zhai, L, Gebre, ST, Chen, B, Xu, D, Chen, J, Li, Z, Liu, Y, Yang, H, Ling, C, Ge, Y, Zhai, W, Chen, C, Ma, L, Zhang, Q, Li, X, Yan, Y, Huang, X, Li, L, Guan, Z, Tao, CL, Huang, Z, Wang, H, Liang, J, Zhu, Y, Lee, CS, Wang, P, Zhang, C, Gu, L, Du, Y, Lian, T, Zhang, H & Wu, XJ 2023, 'Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer', Nature Communications, vol. 14, no. 1, 2538. https://doi.org/10.1038/s41467-023-38237-7
TY - JOUR
T1 - Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
AU - Zhai, Li
AU - Gebre, Sara T.
AU - Chen, Bo
AU - Xu, Dan
AU - Chen, Junze
AU - Li, Zijian
AU - Liu, Yawei
AU - Yang, Hua
AU - Ling, Chongyi
AU - Ge, Yiyao
AU - Zhai, Wei
AU - Chen, Changsheng
AU - Ma, Lu
AU - Zhang, Qinghua
AU - Li, Xuefei
AU - Yan, Yujie
AU - Huang, Xinyu
AU - Li, Lujiang
AU - Guan, Zhiqiang
AU - Tao, Chen Lei
AU - Huang, Zhiqi
AU - Wang, Hongyi
AU - Liang, Jinze
AU - Zhu, Ye
AU - Lee, Chun Sing
AU - Wang, Peng
AU - Zhang, Chunfeng
AU - Gu, Lin
AU - Du, Yonghua
AU - Lian, Tianquan
AU - Zhang, Hua
AU - Wu, Xue Jun
N1 - Publisher Copyright:
© 2023, The Author(s).
PY - 2023/12
Y1 - 2023/12
N2 - Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.
AB - Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.
UR - http://www.scopus.com/inward/record.url?scp=85158018072&partnerID=8YFLogxK
U2 - 10.1038/s41467-023-38237-7
DO - 10.1038/s41467-023-38237-7
M3 - Article
C2 - 37137913
AN - SCOPUS:85158018072
SN - 2041-1723
VL - 14
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 2538
ER -