Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate

Yan Shao; Shiru Song; Xu Wu; Jing Qi; Hongliang Lu; Chen Liu; Shiyu Zhu; Zhongliu Liu; Jiaou Wang; Dongxia Shi; Shixuan Du; Yeliang Wang; H. J. Gao

doi:10.1063/1.4991065

Epitaxial fabrication of two-dimensional NiSe₂ on Ni(111) substrate

Yan Shao, Shiru Song, Xu Wu, Jing Qi, Hongliang Lu, Chen Liu, Shiyu Zhu, Zhongliu Liu, Jiaou Wang, Dongxia Shi, Shixuan Du, Yeliang Wang, H. J. Gao

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. A high-quality 2D film of NiSe₂, a TMD material, is grown epitaxially by a single step direct selenization of a Ni(111) substrate. X-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (√3 × √3) superlattice of the NiSe₂ film formed on the (√7 × √7) superlattice of the substrate. Fabrication of this 2D NiSe₂ film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices.

Original language	English
Article number	113107
Journal	Applied Physics Letters
Volume	111
Issue number	11
DOIs	https://doi.org/10.1063/1.4991065
Publication status	Published - 11 Sept 2017
Externally published	Yes

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title = "Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate",

abstract = "Two-dimensional (2D) transition metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. A high-quality 2D film of NiSe2, a TMD material, is grown epitaxially by a single step direct selenization of a Ni(111) substrate. X-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (√3 × √3) superlattice of the NiSe2 film formed on the (√7 × √7) superlattice of the substrate. Fabrication of this 2D NiSe2 film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices.",

author = "Yan Shao and Shiru Song and Xu Wu and Jing Qi and Hongliang Lu and Chen Liu and Shiyu Zhu and Zhongliu Liu and Jiaou Wang and Dongxia Shi and Shixuan Du and Yeliang Wang and Gao, {H. J.}",

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T1 - Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate

AU - Shao, Yan

AU - Song, Shiru

AU - Wu, Xu

AU - Qi, Jing

AU - Lu, Hongliang

AU - Liu, Chen

AU - Zhu, Shiyu

AU - Liu, Zhongliu

AU - Wang, Jiaou

AU - Shi, Dongxia

AU - Du, Shixuan

AU - Wang, Yeliang

AU - Gao, H. J.

PY - 2017/9/11

Y1 - 2017/9/11

N2 - Two-dimensional (2D) transition metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. A high-quality 2D film of NiSe2, a TMD material, is grown epitaxially by a single step direct selenization of a Ni(111) substrate. X-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (√3 × √3) superlattice of the NiSe2 film formed on the (√7 × √7) superlattice of the substrate. Fabrication of this 2D NiSe2 film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices.

AB - Two-dimensional (2D) transition metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. A high-quality 2D film of NiSe2, a TMD material, is grown epitaxially by a single step direct selenization of a Ni(111) substrate. X-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (√3 × √3) superlattice of the NiSe2 film formed on the (√7 × √7) superlattice of the substrate. Fabrication of this 2D NiSe2 film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices.

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IS - 11

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ER -

Epitaxial fabrication of two-dimensional NiSe₂ on Ni(111) substrate

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