TY - JOUR
T1 - Enhancement of critical current density in MgB2 bulks burying sintered with commercial MgB2 powder
AU - Cai, Qi
AU - Liu, Yongchang
AU - Xiong, Jie
AU - Ma, Zongqing
N1 - Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/6/1
Y1 - 2018/6/1
N2 - Pellets of Mg and B mixture was buried by commercial MgB2 and one-step sintered at 800 °C, two-step sintered at 750 °C followed by 900 °C, and two-step sintered at 800 and 600 °C, respectively. Although an increasing amount of MgO was found in the burying sintered samples, the particles were considerably refined and embedded in the MgB2 grains, as the MgO is likely to be from the absorbed O2 on the commercial MgB2. Commercial MgB2 served as nucleation sites for newly formed MgB2 grains, which mostly generated at solid–solid reaction stage following Ostwald ripening mechanism. Apart from low crystallinity, such low-temperature synthesis of MgB2 induced defects including grain boundaries and second-phase particles as effective pinning centers. As a result, the critical current density is enhanced at high field in the burying sintered samples, in contrast with the one without burying.
AB - Pellets of Mg and B mixture was buried by commercial MgB2 and one-step sintered at 800 °C, two-step sintered at 750 °C followed by 900 °C, and two-step sintered at 800 and 600 °C, respectively. Although an increasing amount of MgO was found in the burying sintered samples, the particles were considerably refined and embedded in the MgB2 grains, as the MgO is likely to be from the absorbed O2 on the commercial MgB2. Commercial MgB2 served as nucleation sites for newly formed MgB2 grains, which mostly generated at solid–solid reaction stage following Ostwald ripening mechanism. Apart from low crystallinity, such low-temperature synthesis of MgB2 induced defects including grain boundaries and second-phase particles as effective pinning centers. As a result, the critical current density is enhanced at high field in the burying sintered samples, in contrast with the one without burying.
UR - http://www.scopus.com/inward/record.url?scp=85045261924&partnerID=8YFLogxK
U2 - 10.1007/s10854-018-9088-y
DO - 10.1007/s10854-018-9088-y
M3 - Article
AN - SCOPUS:85045261924
SN - 0957-4522
VL - 29
SP - 10323
EP - 10328
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 12
ER -