Enhanced strength and toughness in boron nitride nanosheets/Ti composites through in-situ interfacial nano-TiBw manipulation

Ni Xiong, Hongmei Zhang*, Xingwang Cheng, Xiaonan Mu, Ke Feng, Hongqiang Duan, Yu Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Achieving intrinsic strengthening of boron nitride nanosheets (BNNSs) in Ti matrix composites was still an unsettled issue due to its severe and uncontrollable interface reaction. In the present study, high-performance BNNSs/Ti composites were fabricated by using the warm compaction (WC) technique and rapid heat treatment (HT) strategy on the basis of interfacial nano-TiBw design. The intrinsic structure of BNNSs was well-retained and nano-TiBw on partially reacted BNNSs led to a brilliant interface bonding and BNNSs intrinsic strengthening. Tensile tests revealed that 0.1 wt.%BNNSs/Ti composites exhibited the tensile strength (UTS) of 876 MPa (61 % higher than pure Ti) and the fracture elongation of 22.6 %, demonstrating the well-balanced property. By employing the in-situ TEM experiment, we solve an existing debate, uncovering the synergistic toughening effect from BNNSs and interfacial nano-TiBw which effectively inhibited the micro-cracks propagation on BNNSs and heterogeneous interface. This work paves a new way for developing high-performance BNNSs/Ti composites by reaction interface manipulation and underscores the importance of maintaining BNNSs intrinsic structure in the Ti matrix.

Original languageEnglish
Pages (from-to)173-188
Number of pages16
JournalJournal of Materials Science and Technology
Volume219
DOIs
Publication statusPublished - 1 Jun 2025

Keywords

  • BNNSs
  • Interface design
  • Mechanical property
  • Ti matrix composites

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Xiong, N., Zhang, H., Cheng, X., Mu, X., Feng, K., Duan, H., & Wang, Y. (2025). Enhanced strength and toughness in boron nitride nanosheets/Ti composites through in-situ interfacial nano-TiBw manipulation. Journal of Materials Science and Technology, 219, 173-188. https://doi.org/10.1016/j.jmst.2024.07.048