Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO                         2                          buffer layer-coated polymer substrates by magnetron sputtering

Zhi Nong Yu; Jian Jian Zhao; Fan Xia; Ze Jiang Lin; Dong Pu Zhang; Jian Leng; Wei Xue

doi:10.1016/j.apsusc.2010.12.064

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO ₂ buffer layer-coated polymer substrates by magnetron sputtering

Zhi Nong Yu^*, Jian Jian Zhao, Fan Xia, Ze Jiang Lin, Dong Pu Zhang, Jian Leng, Wei Xue

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO ₂ buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO ₂ buffer layer under bending have better electrical stability than those with flat SiO ₂ buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO ₂ buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO ₂ buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO ₂ , the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO ₂ buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

Original language	English
Pages (from-to)	4807-4810
Number of pages	4
Journal	Applied Surface Science
Volume	257
Issue number	11
DOIs	https://doi.org/10.1016/j.apsusc.2010.12.064
Publication status	Published - 15 Mar 2011

Keywords

Buffer layer
Electrical properties
Indium tin oxide (ITO)
Magnetron sputtering

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Yu, Z. N., Zhao, J. J., Xia, F., Lin, Z. J., Zhang, D. P., Leng, J., & Xue, W. (2011). Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO ₂ buffer layer-coated polymer substrates by magnetron sputtering Applied Surface Science, 257(11), 4807-4810. https://doi.org/10.1016/j.apsusc.2010.12.064

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title = " Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO 2 buffer layer-coated polymer substrates by magnetron sputtering ",

abstract = " The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2 , the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.",

keywords = "Buffer layer, Electrical properties, Indium tin oxide (ITO), Magnetron sputtering",

author = "Yu, {Zhi Nong} and Zhao, {Jian Jian} and Fan Xia and Lin, {Ze Jiang} and Zhang, {Dong Pu} and Jian Leng and Wei Xue",

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Yu, ZN, Zhao, JJ, Xia, F, Lin, ZJ, Zhang, DP, Leng, J & Xue, W 2011, ' Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO ₂ buffer layer-coated polymer substrates by magnetron sputtering ', Applied Surface Science, vol. 257, no. 11, pp. 4807-4810. https://doi.org/10.1016/j.apsusc.2010.12.064

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO ₂ buffer layer-coated polymer substrates by magnetron sputtering . / Yu, Zhi Nong; Zhao, Jian Jian; Xia, Fan et al.
In: Applied Surface Science, Vol. 257, No. 11, 15.03.2011, p. 4807-4810.

Research output: Contribution to journal › Article › peer-review

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T1 - Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO 2 buffer layer-coated polymer substrates by magnetron sputtering

AU - Yu, Zhi Nong

AU - Zhao, Jian Jian

AU - Xia, Fan

AU - Lin, Ze Jiang

AU - Zhang, Dong Pu

AU - Leng, Jian

AU - Xue, Wei

PY - 2011/3/15

Y1 - 2011/3/15

N2 - The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2 , the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

AB - The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2 , the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

KW - Buffer layer

KW - Electrical properties

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KW - Magnetron sputtering

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Yu ZN, Zhao JJ, Xia F, Lin ZJ, Zhang DP, Leng J et al. Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO ₂ buffer layer-coated polymer substrates by magnetron sputtering Applied Surface Science. 2011 Mar 15;257(11):4807-4810. doi: 10.1016/j.apsusc.2010.12.064

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO ₂ buffer layer-coated polymer substrates by magnetron sputtering

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