Abstract
Enhancement of the dielectric properties of SiC is achieved by growing the NiO nanorings on the surface of SiC. The SiC assembled with NiO nanorings exhibits highly enhanced dielectric properties and strong microwave absorption due to the hopping charge induced by the NiO nanorings.
Original language | English |
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Pages (from-to) | 214-219 |
Number of pages | 6 |
Journal | Advanced Optical Materials |
Volume | 2 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2014 |
Keywords
- Dielectric properties
- Microwave absorption
- Nanorings
- Nickel oxide
- Silicon carbide