Abstract
Rechargeable aqueous zinc-ion batteries (ZIBs) are the prospective substitution for lithium-ion batteries applied in large scale energy storage system due to their low-cost, environmentally friendliness, and high safety. However, the development of cathodes in aqueous ZIBs suffers from sluggish Zn2+ migration. Herein, nitrogen doped V2O5 is introduced to resolve the above problem. N-doping lowers the bandgap energy of V2O5 to improve its electronic conductivity, and weakens the forces between Zn2+ and V2O5 to fasten Zn2+ diffusion. Further density functional theory (DFT) calculation testifies that N-doping reduces diffusion energy barrier and changes Zn2+ diffusion pathway from the vertical interlayer diffusion to planer intralayer diffusion. Meanwhile, the structural stability of electrode material also benefits from the N-doping, which can prevent the interlayer V2O5 from gliding or exfoliation during cycling. Profiting from these merits, N-doping V2O5 exhibits the outstanding electrochemical properties, such as high rate capability (116.8 mAh/g at 6 A/g) and long cycling performance (3000 cycles at 10 A/g). Dynamics and post-cycling analyses reveal the high capacitive ratio and the stable N distribution in N-doped V2O5 during charging/discharging.
Original language | English |
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Article number | 138770 |
Journal | Chemical Engineering Journal |
Volume | 451 |
DOIs | |
Publication status | Published - 1 Jan 2023 |
Keywords
- Nitrogen interstitial doping
- Reaction kinetics
- Vanadium pentoxide
- Zinc-ion batteries