Abstract
Carbon nitride thin films were deposited on Si(100) substrate from saturated acetonitrile solution of 2,4,6-trichloro-1,3,5-triazine and 2,4,6-triamino-1,3,5-triazine by electrochemistry route at room temperature. The films were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and X-ray diffraction (XRD). These results indicate that crystalline g-C3N4 was obtained in the as-deposited films. The molar ratio of precursors in the reaction system had effects on the chemical composition, chemical bond states of C and N, and crystal structure of samples.
Original language | English |
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Pages (from-to) | 308-312 |
Number of pages | 5 |
Journal | Materials Science and Engineering: B |
Volume | 106 |
Issue number | 3 |
DOIs | |
Publication status | Published - 15 Feb 2004 |
Keywords
- Carbon nitride
- Electrodeposition
- Thin films
- g-CN