Abstract
On ITO-coated glass substrates and Si (l00) substrates carbon nitride films were prepared by electrodeposition in which solutions of dicyandiamide and N, N-dimethlformamide were used as electrolytes. The films were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and X-ray diffraction (XRD). It indicates that carbon nitride films are amorphous, the N/C ratio is 0.72 for a typical sample. Three types of chemical bonds between nitrogen and carbon, C-N, C=Ni, C≡N, appears in the films, in which C-N, C=N are dominant. Resistivity of samples is l011-1012 Ω·cm on Si (100) substrates, 1012-1013 Ω·cm on ITO-coated glass substrates. Depositional rate, nitrogen concentration and resistivity of CNx films are different on ITO-coated glass substrate and Si(100) substrate. The results show that selection of substrate plays an important role in the electrodeposition.
Original language | English |
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Pages (from-to) | 400-402 |
Number of pages | 3 |
Journal | Gongneng Cailiao/Journal of Functional Materials |
Volume | 34 |
Issue number | 4 |
Publication status | Published - Aug 2003 |
Keywords
- CN films
- Carbon nitride
- Electrodeposition
- Resistivity