Electrical transport and photoresponse properties of single-crystalline p-type Cd3As2 nanowires

Ting Yuan Duan, Zheng Lou, Guo Zhen Shen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Cd3As2 is an important II–V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd3As2 nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd3As2 nanowires, which exhibited a high Ion/Ioff of 104 with a hole mobility of 6.02 cm2V−1s−1. Photoresponse properties of the Cd3As2 nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd3As2 nanowires can be the basic material of next generation electronic and optoelectronic devices.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalScience China: Physics, Mechanics and Astronomy
Volume58
Issue number2
DOIs
Publication statusPublished - Feb 2014
Externally publishedYes

Keywords

  • electrical transport
  • nanowires
  • photodetector

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