Electric-field-induced energy gap in few-layer graphene

Kechao Tang; Rui Qin; Jing Zhou; Heruge Qu; Jiaxin Zheng; Ruixiang Fei; Hong Li; Qiye Zheng; Zhengxiang Gao; Jing Lu

doi:10.1021/jp201761p

Electric-field-induced energy gap in few-layer graphene

Kechao Tang, Rui Qin, Jing Zhou, Heruge Qu, Jiaxin Zheng, Ruixiang Fei, Hong Li, Qiye Zheng, Zhengxiang Gao, Jing Lu^*

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

We provide the first systematic ab initio investigation of the possibility to create a band gap in few-layer graphene (FLG) via a perpendicular electric field. Bernal (ABA) and arbitrarily stacked FLG remain semimetallic, but rhombohedral (ABC) stacked FLG demonstrates a variable band gap. The maximum band gap in ABC stacked FLG decreases with increasing layer number and can be fitted by the relationship Δ_max = 1/(2.378 + 0.521N + 0.035N²) eV. The effective masses of carriers over a wide range around the maximum band gap point in ABC stacked FLG are comparable with that in AB bilayer graphene under zero field. It is therefore possible to fabricate an effective field effect transistor operating at room temperature with high carrier mobility out of ABC stacked FLG.

Original language	English
Pages (from-to)	9458-9464
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	115
Issue number	19
DOIs	https://doi.org/10.1021/jp201761p
Publication status	Published - 19 May 2011
Externally published	Yes

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abstract = "We provide the first systematic ab initio investigation of the possibility to create a band gap in few-layer graphene (FLG) via a perpendicular electric field. Bernal (ABA) and arbitrarily stacked FLG remain semimetallic, but rhombohedral (ABC) stacked FLG demonstrates a variable band gap. The maximum band gap in ABC stacked FLG decreases with increasing layer number and can be fitted by the relationship Δmax = 1/(2.378 + 0.521N + 0.035N2) eV. The effective masses of carriers over a wide range around the maximum band gap point in ABC stacked FLG are comparable with that in AB bilayer graphene under zero field. It is therefore possible to fabricate an effective field effect transistor operating at room temperature with high carrier mobility out of ABC stacked FLG.",

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T1 - Electric-field-induced energy gap in few-layer graphene

AU - Tang, Kechao

AU - Qin, Rui

AU - Zhou, Jing

AU - Qu, Heruge

AU - Zheng, Jiaxin

AU - Fei, Ruixiang

AU - Li, Hong

AU - Zheng, Qiye

AU - Gao, Zhengxiang

AU - Lu, Jing

PY - 2011/5/19

Y1 - 2011/5/19

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AB - We provide the first systematic ab initio investigation of the possibility to create a band gap in few-layer graphene (FLG) via a perpendicular electric field. Bernal (ABA) and arbitrarily stacked FLG remain semimetallic, but rhombohedral (ABC) stacked FLG demonstrates a variable band gap. The maximum band gap in ABC stacked FLG decreases with increasing layer number and can be fitted by the relationship Δmax = 1/(2.378 + 0.521N + 0.035N2) eV. The effective masses of carriers over a wide range around the maximum band gap point in ABC stacked FLG are comparable with that in AB bilayer graphene under zero field. It is therefore possible to fabricate an effective field effect transistor operating at room temperature with high carrier mobility out of ABC stacked FLG.

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Electric-field-induced energy gap in few-layer graphene

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