Tang, K., Qin, R., Zhou, J., Qu, H., Zheng, J., Fei, R., Li, H., Zheng, Q., Gao, Z., & Lu, J. (2011). Electric-field-induced energy gap in few-layer graphene. Journal of Physical Chemistry C, 115(19), 9458-9464. https://doi.org/10.1021/jp201761p
Tang, Kechao ; Qin, Rui ; Zhou, Jing et al. / Electric-field-induced energy gap in few-layer graphene. In: Journal of Physical Chemistry C. 2011 ; Vol. 115, No. 19. pp. 9458-9464.
@article{4e7b9a29e99a4aba8c53561e7ffea6e0,
title = "Electric-field-induced energy gap in few-layer graphene",
abstract = "We provide the first systematic ab initio investigation of the possibility to create a band gap in few-layer graphene (FLG) via a perpendicular electric field. Bernal (ABA) and arbitrarily stacked FLG remain semimetallic, but rhombohedral (ABC) stacked FLG demonstrates a variable band gap. The maximum band gap in ABC stacked FLG decreases with increasing layer number and can be fitted by the relationship Δmax = 1/(2.378 + 0.521N + 0.035N2) eV. The effective masses of carriers over a wide range around the maximum band gap point in ABC stacked FLG are comparable with that in AB bilayer graphene under zero field. It is therefore possible to fabricate an effective field effect transistor operating at room temperature with high carrier mobility out of ABC stacked FLG.",
author = "Kechao Tang and Rui Qin and Jing Zhou and Heruge Qu and Jiaxin Zheng and Ruixiang Fei and Hong Li and Qiye Zheng and Zhengxiang Gao and Jing Lu",
year = "2011",
month = may,
day = "19",
doi = "10.1021/jp201761p",
language = "English",
volume = "115",
pages = "9458--9464",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "19",
}
Tang, K, Qin, R, Zhou, J, Qu, H, Zheng, J, Fei, R, Li, H, Zheng, Q, Gao, Z & Lu, J 2011, 'Electric-field-induced energy gap in few-layer graphene', Journal of Physical Chemistry C, vol. 115, no. 19, pp. 9458-9464. https://doi.org/10.1021/jp201761p
Electric-field-induced energy gap in few-layer graphene. / Tang, Kechao; Qin, Rui; Zhou, Jing et al.
In:
Journal of Physical Chemistry C, Vol. 115, No. 19, 19.05.2011, p. 9458-9464.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Electric-field-induced energy gap in few-layer graphene
AU - Tang, Kechao
AU - Qin, Rui
AU - Zhou, Jing
AU - Qu, Heruge
AU - Zheng, Jiaxin
AU - Fei, Ruixiang
AU - Li, Hong
AU - Zheng, Qiye
AU - Gao, Zhengxiang
AU - Lu, Jing
PY - 2011/5/19
Y1 - 2011/5/19
N2 - We provide the first systematic ab initio investigation of the possibility to create a band gap in few-layer graphene (FLG) via a perpendicular electric field. Bernal (ABA) and arbitrarily stacked FLG remain semimetallic, but rhombohedral (ABC) stacked FLG demonstrates a variable band gap. The maximum band gap in ABC stacked FLG decreases with increasing layer number and can be fitted by the relationship Δmax = 1/(2.378 + 0.521N + 0.035N2) eV. The effective masses of carriers over a wide range around the maximum band gap point in ABC stacked FLG are comparable with that in AB bilayer graphene under zero field. It is therefore possible to fabricate an effective field effect transistor operating at room temperature with high carrier mobility out of ABC stacked FLG.
AB - We provide the first systematic ab initio investigation of the possibility to create a band gap in few-layer graphene (FLG) via a perpendicular electric field. Bernal (ABA) and arbitrarily stacked FLG remain semimetallic, but rhombohedral (ABC) stacked FLG demonstrates a variable band gap. The maximum band gap in ABC stacked FLG decreases with increasing layer number and can be fitted by the relationship Δmax = 1/(2.378 + 0.521N + 0.035N2) eV. The effective masses of carriers over a wide range around the maximum band gap point in ABC stacked FLG are comparable with that in AB bilayer graphene under zero field. It is therefore possible to fabricate an effective field effect transistor operating at room temperature with high carrier mobility out of ABC stacked FLG.
UR - http://www.scopus.com/inward/record.url?scp=79956115961&partnerID=8YFLogxK
U2 - 10.1021/jp201761p
DO - 10.1021/jp201761p
M3 - Article
AN - SCOPUS:79956115961
SN - 1932-7447
VL - 115
SP - 9458
EP - 9464
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 19
ER -
Tang K, Qin R, Zhou J, Qu H, Zheng J, Fei R et al. Electric-field-induced energy gap in few-layer graphene. Journal of Physical Chemistry C. 2011 May 19;115(19):9458-9464. doi: 10.1021/jp201761p
