Effects of strain on electronic and optic properties of holey two-dimensional C2N crystals

Shan Guan, Yingchun Cheng, Chang Liu, Junfeng Han, Yunhao Lu, Shengyuan A. Yang, Yugui Yao

Research output: Contribution to journalArticlepeer-review

135 Citations (Scopus)

Abstract

A two-dimensional (2D) material, the holey 2D C2N (h2D-C2N) crystal, has recently been synthesized. Here, we investigate the strain effects on the properties of this material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains ≥ 12 %. It remains a direct gap semiconductor under strain, and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient ∼ 10 6 cm-1 covering a wide spectrum. Our findings suggest the great potential of strain-engineered h2D-C2N in electronic and optoelectronic device applications.

Original languageEnglish
Article number231904
JournalApplied Physics Letters
Volume107
Issue number23
DOIs
Publication statusPublished - 7 Dec 2015

Fingerprint

Dive into the research topics of 'Effects of strain on electronic and optic properties of holey two-dimensional C2N crystals'. Together they form a unique fingerprint.

Cite this