Dynamic piezo-phototronic effect in InGaN/GaN multiple quantum wells

Junsen Mo, Qilin Hua, Wei Sha, Mingyue Yao, Jiangwen Wang, Lingyu Wan, Junyi Zhai, Tao Lin*, Weiguo Hu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Piezo-phototronic effect in flexible III-nitride optoelectronic devices is of great interest in both enhanced performance and new functionalities. This work studies the carrier dynamics in flexible InGaN/GaN multiple quantum wells under varied external stress regulation. It was observed that photoluminescence (PL) intensity and carrier lifetime varied non-monotonically with increasing external stress obtaining a maximum PL enhancement of ~19%. This finding reveals the inherent mechanism of how remaining internal stress determines the optoelectronic performance throughout compensating and over-compensating for the built-in piezoelectric field in InGaN wells and will guide the further device development.

Original languageEnglish
Article number106926
JournalSuperlattices and Microstructures
Volume155
DOIs
Publication statusPublished - Jul 2021
Externally publishedYes

Keywords

  • Carrier lifetime
  • InGaN
  • Piezo-phototronic effect
  • Quantum-confined Stark effect

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Mo, J., Hua, Q., Sha, W., Yao, M., Wang, J., Wan, L., Zhai, J., Lin, T., & Hu, W. (2021). Dynamic piezo-phototronic effect in InGaN/GaN multiple quantum wells. Superlattices and Microstructures, 155, Article 106926. https://doi.org/10.1016/j.spmi.2021.106926