Abstract
Piezo-phototronic effect in flexible III-nitride optoelectronic devices is of great interest in both enhanced performance and new functionalities. This work studies the carrier dynamics in flexible InGaN/GaN multiple quantum wells under varied external stress regulation. It was observed that photoluminescence (PL) intensity and carrier lifetime varied non-monotonically with increasing external stress obtaining a maximum PL enhancement of ~19%. This finding reveals the inherent mechanism of how remaining internal stress determines the optoelectronic performance throughout compensating and over-compensating for the built-in piezoelectric field in InGaN wells and will guide the further device development.
Original language | English |
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Article number | 106926 |
Journal | Superlattices and Microstructures |
Volume | 155 |
DOIs | |
Publication status | Published - Jul 2021 |
Externally published | Yes |
Keywords
- Carrier lifetime
- InGaN
- Piezo-phototronic effect
- Quantum-confined Stark effect