Wang, J., Xu, X., Cheng, T., Gu, L., Qiao, R., Liang, Z., Ding, D., Hong, H., Zheng, P., Zhang, Z., Zhang, Z., Zhang, S., Cui, G., Chang, C., Huang, C., Qi, J., Liang, J., Liu, C., Zuo, Y., ... Liu, K. (2022). Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire. Nature Nanotechnology, 17(1), 33-38. https://doi.org/10.1038/s41565-021-01004-0
@article{80fd895598e540f38b42f461f848241c,
title = "Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire",
abstract = "The growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) on insulating substrates is critically important for a variety of high-end applications1–4. Although the epitaxial growth of wafer-scale graphene and hexagonal boron nitride on metal surfaces has been reported5–8, these techniques are not applicable for growing TMDs on insulating substrates because of substantial differences in growth kinetics. Thus, despite great efforts9–20, the direct growth of wafer-scale single-crystal TMDs on insulating substrates is yet to be realized. Here we report the successful epitaxial growth of two-inch single-crystal WS2 monolayer films on vicinal a-plane sapphire surfaces. In-depth characterizations and theoretical calculations reveal that the epitaxy is driven by a dual-coupling-guided mechanism, where the sapphire plane–WS2 interaction leads to two preferred antiparallel orientations of the WS2 crystal, and sapphire step edge–WS2 interaction breaks the symmetry of the antiparallel orientations. These two interactions result in the unidirectional alignment of nearly all the WS2 islands. The unidirectional alignment and seamless stitching of WS2 islands are illustrated via multiscale characterization techniques; the high quality of WS2 monolayers is further evidenced by a photoluminescent circular helicity of ~55%, comparable to that of exfoliated WS2 flakes. Our findings offer the opportunity to boost the production of wafer-scale single crystals of a broad range of two-dimensional materials on insulators, paving the way to applications in integrated devices.",
author = "Jinhuan Wang and Xiaozhi Xu and Ting Cheng and Lehua Gu and Ruixi Qiao and Zhihua Liang and Dongdong Ding and Hao Hong and Peiming Zheng and Zhibin Zhang and Zhihong Zhang and Shuai Zhang and Guoliang Cui and Chao Chang and Chen Huang and Jiajie Qi and Jing Liang and Can Liu and Yonggang Zuo and Guodong Xue and Xinjie Fang and Jinpeng Tian and Muhong Wu and Yi Guo and Zhixin Yao and Qingze Jiao and Lei Liu and Peng Gao and Qunyang Li and Rong Yang and Guangyu Zhang and Zhilie Tang and Dapeng Yu and Enge Wang and Jianming Lu and Yun Zhao and Shiwei Wu and Feng Ding and Kaihui Liu",
note = "Publisher Copyright: {\textcopyright} 2021, The Author(s), under exclusive licence to Springer Nature Limited.",
year = "2022",
month = jan,
doi = "10.1038/s41565-021-01004-0",
language = "English",
volume = "17",
pages = "33--38",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "Nature Publishing Group",
number = "1",
}
Wang, J, Xu, X, Cheng, T, Gu, L, Qiao, R, Liang, Z, Ding, D, Hong, H, Zheng, P, Zhang, Z, Zhang, Z, Zhang, S, Cui, G, Chang, C, Huang, C, Qi, J, Liang, J, Liu, C, Zuo, Y, Xue, G, Fang, X, Tian, J, Wu, M, Guo, Y, Yao, Z, Jiao, Q, Liu, L, Gao, P, Li, Q, Yang, R, Zhang, G, Tang, Z, Yu, D, Wang, E, Lu, J, Zhao, Y, Wu, S, Ding, F & Liu, K 2022, 'Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire', Nature Nanotechnology, vol. 17, no. 1, pp. 33-38. https://doi.org/10.1038/s41565-021-01004-0
TY - JOUR
T1 - Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire
AU - Wang, Jinhuan
AU - Xu, Xiaozhi
AU - Cheng, Ting
AU - Gu, Lehua
AU - Qiao, Ruixi
AU - Liang, Zhihua
AU - Ding, Dongdong
AU - Hong, Hao
AU - Zheng, Peiming
AU - Zhang, Zhibin
AU - Zhang, Zhihong
AU - Zhang, Shuai
AU - Cui, Guoliang
AU - Chang, Chao
AU - Huang, Chen
AU - Qi, Jiajie
AU - Liang, Jing
AU - Liu, Can
AU - Zuo, Yonggang
AU - Xue, Guodong
AU - Fang, Xinjie
AU - Tian, Jinpeng
AU - Wu, Muhong
AU - Guo, Yi
AU - Yao, Zhixin
AU - Jiao, Qingze
AU - Liu, Lei
AU - Gao, Peng
AU - Li, Qunyang
AU - Yang, Rong
AU - Zhang, Guangyu
AU - Tang, Zhilie
AU - Yu, Dapeng
AU - Wang, Enge
AU - Lu, Jianming
AU - Zhao, Yun
AU - Wu, Shiwei
AU - Ding, Feng
AU - Liu, Kaihui
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Nature Limited.
PY - 2022/1
Y1 - 2022/1
N2 - The growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) on insulating substrates is critically important for a variety of high-end applications1–4. Although the epitaxial growth of wafer-scale graphene and hexagonal boron nitride on metal surfaces has been reported5–8, these techniques are not applicable for growing TMDs on insulating substrates because of substantial differences in growth kinetics. Thus, despite great efforts9–20, the direct growth of wafer-scale single-crystal TMDs on insulating substrates is yet to be realized. Here we report the successful epitaxial growth of two-inch single-crystal WS2 monolayer films on vicinal a-plane sapphire surfaces. In-depth characterizations and theoretical calculations reveal that the epitaxy is driven by a dual-coupling-guided mechanism, where the sapphire plane–WS2 interaction leads to two preferred antiparallel orientations of the WS2 crystal, and sapphire step edge–WS2 interaction breaks the symmetry of the antiparallel orientations. These two interactions result in the unidirectional alignment of nearly all the WS2 islands. The unidirectional alignment and seamless stitching of WS2 islands are illustrated via multiscale characterization techniques; the high quality of WS2 monolayers is further evidenced by a photoluminescent circular helicity of ~55%, comparable to that of exfoliated WS2 flakes. Our findings offer the opportunity to boost the production of wafer-scale single crystals of a broad range of two-dimensional materials on insulators, paving the way to applications in integrated devices.
AB - The growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) on insulating substrates is critically important for a variety of high-end applications1–4. Although the epitaxial growth of wafer-scale graphene and hexagonal boron nitride on metal surfaces has been reported5–8, these techniques are not applicable for growing TMDs on insulating substrates because of substantial differences in growth kinetics. Thus, despite great efforts9–20, the direct growth of wafer-scale single-crystal TMDs on insulating substrates is yet to be realized. Here we report the successful epitaxial growth of two-inch single-crystal WS2 monolayer films on vicinal a-plane sapphire surfaces. In-depth characterizations and theoretical calculations reveal that the epitaxy is driven by a dual-coupling-guided mechanism, where the sapphire plane–WS2 interaction leads to two preferred antiparallel orientations of the WS2 crystal, and sapphire step edge–WS2 interaction breaks the symmetry of the antiparallel orientations. These two interactions result in the unidirectional alignment of nearly all the WS2 islands. The unidirectional alignment and seamless stitching of WS2 islands are illustrated via multiscale characterization techniques; the high quality of WS2 monolayers is further evidenced by a photoluminescent circular helicity of ~55%, comparable to that of exfoliated WS2 flakes. Our findings offer the opportunity to boost the production of wafer-scale single crystals of a broad range of two-dimensional materials on insulators, paving the way to applications in integrated devices.
UR - http://www.scopus.com/inward/record.url?scp=85119001115&partnerID=8YFLogxK
U2 - 10.1038/s41565-021-01004-0
DO - 10.1038/s41565-021-01004-0
M3 - Article
C2 - 34782776
AN - SCOPUS:85119001115
SN - 1748-3387
VL - 17
SP - 33
EP - 38
JO - Nature Nanotechnology
JF - Nature Nanotechnology
IS - 1
ER -