Double quantum dot as detector of spin bias

Qing Feng Sun*, Yanxia Xing, Shun Qing Shen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)

Abstract

It was proposed that a double quantum dot can be used as a detector of the spin bias. Electron transport through a double quantum dot is theoretically investigated when a pure spin bias is applied on two conducting leads in contact with the quantum dot. It is found that the spin polarization in the left and right dots may be spontaneously induced, while the intradot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit, a charge bias instead of a charge current will be induced at equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.

Original languageEnglish
Article number195313
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number19
DOIs
Publication statusPublished - 13 May 2008
Externally publishedYes

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