Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Gang Wang, Jinhua Li, Da Chen, Li Zheng, Xiaohu Zheng, Qinglei Guo, Xing Wei, Guqiao Ding, Miao Zhang, Zengfeng Di, Su Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Pure Ni film is the first metal catalyst that can generate graphene with small domains and variable thickness across the film. The lack of control over layer number is attributed to the high carbon solubility of Ni. We designed a combinatorial Ni/Si system, which enables the direct growth of monolayer graphene via chemical vapor deposition method. In this system, Si was introduced as the carbon diffusion barriers to prevent carbon diffusing into Ni film. The designed system fully overcomes the fundamental limitations of Ni and provides a facile and effective strategy to yield homogenous monolayer graphene over large area. The field effect transistors were fabricated and characterized to determine the electrical properties of the synthesized graphene film. Furthermore, this technique can utilize standard equipments available in semiconductor technology.

Original languageEnglish
Article number213101
JournalApplied Physics Letters
Volume104
Issue number21
DOIs
Publication statusPublished - 26 May 2014
Externally publishedYes

Fingerprint

Dive into the research topics of 'Direct growth of single-layer graphene on Ni surface manipulated by Si barrier'. Together they form a unique fingerprint.

Cite this